Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts
Ambipolar field-effect transistors (FETs) possessing both electron and hole carriers enable implementation of novel reconfigurable transistors, artificial synaptic transistors, and output polarity controllable (OPC) amplifiers. Here, we fabricated a two-dimensional (2D) material-based complementary...
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| Veröffentlicht in: | Nanotechnology 2023-08, Vol.34 (32), p.325705 |
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| container_title | Nanotechnology |
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| creator | Park, Jimin Son, Jangyup Park, Sang Kyu Lee, Dong Su Jeon, Dae-Young |
| description | Ambipolar field-effect transistors (FETs) possessing both electron and hole carriers enable implementation of novel reconfigurable transistors, artificial synaptic transistors, and output polarity controllable (OPC) amplifiers. Here, we fabricated a two-dimensional (2D) material-based complementary ambipolar FET and investigated its electrical characteristics. Properties of ohmic-like contacts at source/drain sides were verified from output characteristics and temperature-dependent measurements. The symmetry of electron and hole currents can be easily achieved by optimization of the MoS
or WSe
channels, different from the conventional ambipolar FET with fundamental issues related to Schottky barriers. In addition, we demonstrated successful operation of a complementary inverter and OPC amplifier, using the fabricated complementary ambipolar FET based on 2D materials. |
| doi_str_mv | 10.1088/1361-6528/acd2e3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_iop_journals_10_1088_1361_6528_acd2e3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2810916171</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-d6f8a797432238d6b75c2e492b821b92b7cff34b5062d544b38935419d290d123</originalsourceid><addsrcrecordid>eNp9kM1rHCEYh6UkNJtt7z2FOTYQGz9n9FhCkxQWeknO4vjBmjrjVF2W_vd12U1OJSC8oM_vx-sDwBeMvmEkxC2mPYY9J-JWG0sc_QBWb1dnYIUkHyBjgl2Ay1JeEMJYEPwRXNABs55LuQLbp32CNkxuLiHNOnaTri4HHeGoi7OdSdMSXXuuOv_t9DSGJUWdOx9ctNB570ztatYtXmrKpduHuu3SdgoGxvDbtYIWNbV8Audex-I-n-YaPN__eLp7hJtfDz_vvm-goYRWaHsv9CAHRgmhwvbjwA1xTJKxbT62MRjvKRs56onljI1USMoZlpZIZDGha_D12Lvk9GfnSlVTKMbFqGeXdkURgZHEPR5wQ9ERNTmVkp1XSw5T-6fCSB38qoNMdZCpjn5b5OrUvhsnZ98Cr0IbcHMEQlrUS9rl5rS813f9H3zWc1KUKUra4QPiarGe_gNJLpN1</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2810916171</pqid></control><display><type>article</type><title>Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Park, Jimin ; Son, Jangyup ; Park, Sang Kyu ; Lee, Dong Su ; Jeon, Dae-Young</creator><creatorcontrib>Park, Jimin ; Son, Jangyup ; Park, Sang Kyu ; Lee, Dong Su ; Jeon, Dae-Young</creatorcontrib><description>Ambipolar field-effect transistors (FETs) possessing both electron and hole carriers enable implementation of novel reconfigurable transistors, artificial synaptic transistors, and output polarity controllable (OPC) amplifiers. Here, we fabricated a two-dimensional (2D) material-based complementary ambipolar FET and investigated its electrical characteristics. Properties of ohmic-like contacts at source/drain sides were verified from output characteristics and temperature-dependent measurements. The symmetry of electron and hole currents can be easily achieved by optimization of the MoS
or WSe
channels, different from the conventional ambipolar FET with fundamental issues related to Schottky barriers. In addition, we demonstrated successful operation of a complementary inverter and OPC amplifier, using the fabricated complementary ambipolar FET based on 2D materials.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/acd2e3</identifier><identifier>PMID: 37146599</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>2D materials ; ambipolar field-effect transistors ; ohmic-like contacts ; output polarity controllable amplifiers ; Schottky barrier ; symmetry of electron and hole current</subject><ispartof>Nanotechnology, 2023-08, Vol.34 (32), p.325705</ispartof><rights>2023 IOP Publishing Ltd</rights><rights>2023 IOP Publishing Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c323t-d6f8a797432238d6b75c2e492b821b92b7cff34b5062d544b38935419d290d123</cites><orcidid>0000-0002-3781-8514</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6528/acd2e3/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>315,781,785,27929,27930,53851,53898</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/37146599$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Jimin</creatorcontrib><creatorcontrib>Son, Jangyup</creatorcontrib><creatorcontrib>Park, Sang Kyu</creatorcontrib><creatorcontrib>Lee, Dong Su</creatorcontrib><creatorcontrib>Jeon, Dae-Young</creatorcontrib><title>Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts</title><title>Nanotechnology</title><addtitle>NANO</addtitle><addtitle>Nanotechnology</addtitle><description>Ambipolar field-effect transistors (FETs) possessing both electron and hole carriers enable implementation of novel reconfigurable transistors, artificial synaptic transistors, and output polarity controllable (OPC) amplifiers. Here, we fabricated a two-dimensional (2D) material-based complementary ambipolar FET and investigated its electrical characteristics. Properties of ohmic-like contacts at source/drain sides were verified from output characteristics and temperature-dependent measurements. The symmetry of electron and hole currents can be easily achieved by optimization of the MoS
or WSe
channels, different from the conventional ambipolar FET with fundamental issues related to Schottky barriers. In addition, we demonstrated successful operation of a complementary inverter and OPC amplifier, using the fabricated complementary ambipolar FET based on 2D materials.</description><subject>2D materials</subject><subject>ambipolar field-effect transistors</subject><subject>ohmic-like contacts</subject><subject>output polarity controllable amplifiers</subject><subject>Schottky barrier</subject><subject>symmetry of electron and hole current</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kM1rHCEYh6UkNJtt7z2FOTYQGz9n9FhCkxQWeknO4vjBmjrjVF2W_vd12U1OJSC8oM_vx-sDwBeMvmEkxC2mPYY9J-JWG0sc_QBWb1dnYIUkHyBjgl2Ay1JeEMJYEPwRXNABs55LuQLbp32CNkxuLiHNOnaTri4HHeGoi7OdSdMSXXuuOv_t9DSGJUWdOx9ctNB570ztatYtXmrKpduHuu3SdgoGxvDbtYIWNbV8Audex-I-n-YaPN__eLp7hJtfDz_vvm-goYRWaHsv9CAHRgmhwvbjwA1xTJKxbT62MRjvKRs56onljI1USMoZlpZIZDGha_D12Lvk9GfnSlVTKMbFqGeXdkURgZHEPR5wQ9ERNTmVkp1XSw5T-6fCSB38qoNMdZCpjn5b5OrUvhsnZ98Cr0IbcHMEQlrUS9rl5rS813f9H3zWc1KUKUra4QPiarGe_gNJLpN1</recordid><startdate>20230806</startdate><enddate>20230806</enddate><creator>Park, Jimin</creator><creator>Son, Jangyup</creator><creator>Park, Sang Kyu</creator><creator>Lee, Dong Su</creator><creator>Jeon, Dae-Young</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-3781-8514</orcidid></search><sort><creationdate>20230806</creationdate><title>Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts</title><author>Park, Jimin ; Son, Jangyup ; Park, Sang Kyu ; Lee, Dong Su ; Jeon, Dae-Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-d6f8a797432238d6b75c2e492b821b92b7cff34b5062d544b38935419d290d123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>2D materials</topic><topic>ambipolar field-effect transistors</topic><topic>ohmic-like contacts</topic><topic>output polarity controllable amplifiers</topic><topic>Schottky barrier</topic><topic>symmetry of electron and hole current</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Jimin</creatorcontrib><creatorcontrib>Son, Jangyup</creatorcontrib><creatorcontrib>Park, Sang Kyu</creatorcontrib><creatorcontrib>Lee, Dong Su</creatorcontrib><creatorcontrib>Jeon, Dae-Young</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Jimin</au><au>Son, Jangyup</au><au>Park, Sang Kyu</au><au>Lee, Dong Su</au><au>Jeon, Dae-Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2023-08-06</date><risdate>2023</risdate><volume>34</volume><issue>32</issue><spage>325705</spage><pages>325705-</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>Ambipolar field-effect transistors (FETs) possessing both electron and hole carriers enable implementation of novel reconfigurable transistors, artificial synaptic transistors, and output polarity controllable (OPC) amplifiers. Here, we fabricated a two-dimensional (2D) material-based complementary ambipolar FET and investigated its electrical characteristics. Properties of ohmic-like contacts at source/drain sides were verified from output characteristics and temperature-dependent measurements. The symmetry of electron and hole currents can be easily achieved by optimization of the MoS
or WSe
channels, different from the conventional ambipolar FET with fundamental issues related to Schottky barriers. In addition, we demonstrated successful operation of a complementary inverter and OPC amplifier, using the fabricated complementary ambipolar FET based on 2D materials.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>37146599</pmid><doi>10.1088/1361-6528/acd2e3</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-3781-8514</orcidid></addata></record> |
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| ispartof | Nanotechnology, 2023-08, Vol.34 (32), p.325705 |
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| subjects | 2D materials ambipolar field-effect transistors ohmic-like contacts output polarity controllable amplifiers Schottky barrier symmetry of electron and hole current |
| title | Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts |
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