Reduction of charge impurities in a silicon metal-oxide-semiconductor quantum dot qubit device patterned with nano-imprint lithography

The silicon metal-oxide-semiconductor quantum dot architecture is a leading approach for the physical implementation of semiconductor quantum computing. One major challenge for scalable quantum dots is the presence of charge impurities. Electron-beam lithography (EBL), almost universally used to fab...

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Veröffentlicht in:	Nanotechnology 2019-11, Vol.30 (46), p.465302-465302
Hauptverfasser:	Penthorn, Nicholas E, Schoenfield, Joshua S, Rooney, John D, Jiang, HongWen
Format:	Artikel
Sprache:	eng
Schlagworte:	nano-imprint lithography quantum dot quantum information qubit silicon metal-insulator-semiconductor
Online-Zugang:	Volltext
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