Monolithic radio frequency SiNx self-rolled-up nanomembrane interdigital capacitor modeling and fabrication
Monolithic capacitors operating at radio frequencies (RF) serve as critical components in integrated circuits for wireless communication. Design and fabrication innovations for high capacitance density RF capacitors are highly desired for the miniaturization of RFIC chips. However, practical and sim...
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Veröffentlicht in: | Nanotechnology 2019-09, Vol.30 (36) |
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container_title | Nanotechnology |
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creator | Sang, Lei Zhou, Hao Yang, Zhendong Kraman, Mark D Zhao, Haojie Michaels, Julian A Sievers, Dane J Schutt-aine, Jose E Li, Xiuling Huang, Wen |
description | Monolithic capacitors operating at radio frequencies (RF) serve as critical components in integrated circuits for wireless communication. Design and fabrication innovations for high capacitance density RF capacitors are highly desired for the miniaturization of RFIC chips. However, practical and simple solutions are limited by existing capabilities in three-dimensional (3D) structure construction and the effective configuration of electrodes. We report a unique route to achieve unprecedentedly high capacitance density at a high operating frequency through a capacitor configuration of 3D coil interdigital electrodes using planar semiconductor processing compatible materials and fabrication methods. A systematic mechanical-electrical design principle is demonstrated, and fabricated devices show a maximum 21.5 pF capacitance, which is 17.2× larger after rolling up. The corresponding capacitance density is as large as 371 pF mm−2, with resonant frequency of 1.5 GHz. The performance could be improved significantly by simply rolling up more turns with minimal change to the area footprint. |
doi_str_mv | 10.1088/1361-6528/ab244b |
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Design and fabrication innovations for high capacitance density RF capacitors are highly desired for the miniaturization of RFIC chips. However, practical and simple solutions are limited by existing capabilities in three-dimensional (3D) structure construction and the effective configuration of electrodes. We report a unique route to achieve unprecedentedly high capacitance density at a high operating frequency through a capacitor configuration of 3D coil interdigital electrodes using planar semiconductor processing compatible materials and fabrication methods. A systematic mechanical-electrical design principle is demonstrated, and fabricated devices show a maximum 21.5 pF capacitance, which is 17.2× larger after rolling up. The corresponding capacitance density is as large as 371 pF mm−2, with resonant frequency of 1.5 GHz. 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Design and fabrication innovations for high capacitance density RF capacitors are highly desired for the miniaturization of RFIC chips. However, practical and simple solutions are limited by existing capabilities in three-dimensional (3D) structure construction and the effective configuration of electrodes. We report a unique route to achieve unprecedentedly high capacitance density at a high operating frequency through a capacitor configuration of 3D coil interdigital electrodes using planar semiconductor processing compatible materials and fabrication methods. A systematic mechanical-electrical design principle is demonstrated, and fabricated devices show a maximum 21.5 pF capacitance, which is 17.2× larger after rolling up. The corresponding capacitance density is as large as 371 pF mm−2, with resonant frequency of 1.5 GHz. 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Design and fabrication innovations for high capacitance density RF capacitors are highly desired for the miniaturization of RFIC chips. However, practical and simple solutions are limited by existing capabilities in three-dimensional (3D) structure construction and the effective configuration of electrodes. We report a unique route to achieve unprecedentedly high capacitance density at a high operating frequency through a capacitor configuration of 3D coil interdigital electrodes using planar semiconductor processing compatible materials and fabrication methods. A systematic mechanical-electrical design principle is demonstrated, and fabricated devices show a maximum 21.5 pF capacitance, which is 17.2× larger after rolling up. The corresponding capacitance density is as large as 371 pF mm−2, with resonant frequency of 1.5 GHz. The performance could be improved significantly by simply rolling up more turns with minimal change to the area footprint.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-6528/ab244b</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-9310-6829</orcidid><orcidid>https://orcid.org/0000-0003-3698-5182</orcidid><orcidid>https://orcid.org/0000-0002-3331-1425</orcidid></addata></record> |
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subjects | interdigital capacitor radio frequency self-rolled-up nanomembrane |
title | Monolithic radio frequency SiNx self-rolled-up nanomembrane interdigital capacitor modeling and fabrication |
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