Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening

Metamorphic InAs/In0.15Ga0.85As and InAs/In0.31Ga0.69As quantum dot (QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 m, respectively; however, for photonic applications of these nanostructures, the effect of levels related to defects still needs in-depth inv...

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Veröffentlicht in:	Nanotechnology 2019-07, Vol.30 (30), p.305701
Hauptverfasser:	Golovynskyi, Sergii, Datsenko, Oleksandr I, Seravalli, Luca, Trevisi, Giovanna, Frigeri, Paola, Babichuk, Ivan S, Golovynska, Iuliia, Li, Baikui, Qu, Junle
Format:	Artikel
Sprache:	eng
Schlagworte:	Coulomb screening defect InAs/InGaAs metamorphic nanostructure photocurrent quantum dot
Online-Zugang:	Volltext
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