Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using...

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Veröffentlicht in:	Nanotechnology 2018-05, Vol.29 (21)
Hauptverfasser:	Choi, Hyeongsu, Lee, Jeongsu, Shin, Seokyoon, Lee, Juhyun, Lee, Seungjin, Park, Hyunwoo, Kwon, Sejin, Lee, Namgue, Bang, Minwook, Lee, Seung-Beck, Jeon, Hyeongtag
Format:	Artikel
Sprache:	eng
Schlagworte:	atomic layer deposition field effect transistor highly crystalline thin film phase transition residual off-state conductance tin sulfide two dimensional materials
Online-Zugang:	Volltext
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