Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures

We carried out a systematic study of hexagonal boron nitride/graphene (h-BN/G) heterostructure growth by introducing high incorporation of a carbon (C) source on a heated cobalt (Co) foil substrate followed by boron and nitrogen sources in a molecular beam epitaxy system. With the increase of C inco...

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Veröffentlicht in:	Nanotechnology 2018-01, Vol.29 (3), p.035602-035602
Hauptverfasser:	Khanaki, Alireza, Tian, Hao, Xu, Zhongguang, Zheng, Renjing, He, Yanwei, Cui, Zhenjun, Yang, Jingchuan, Liu, Jianlin
Format:	Artikel
Sprache:	eng
Schlagworte:	cobalt substrate epitaxial growth graphene heterostructure hexagonal boron nitride molecular beam epitaxy
Online-Zugang:	Volltext
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