Spin-dependent transient current in transistor-like nanostructures

Transient current in transistor-like nanostructures has been studied by a model of a few electrons confined in a one-dimensional effective potential consisting of three quantum wells, 'source', 'gate', and 'drain'. The time-dependent Schrödinger equation for the electro...

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Veröffentlicht in:	Journal of physics. Condensed matter 2020-10, Vol.32 (43), p.435302
Hauptverfasser:	Asano, Katsuya, Sako, Tokuei, Ishida, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	electron correlation nanostructure resonance tunneling symplectic integrator transient current transistor
Online-Zugang:	Volltext
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