Tunnelling characteristics of Stone-Wales defects in monolayers of Sn and group-V elements

Topological defects in ultrathin layers are often formed during synthesis and processing, thereby strongly influencing the electronic properties of layered systems. For the monolayers of Sn and group-V elements, we report the results based on density functional theory determining the role of Stone-W...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physics. Condensed matter 2017-10, Vol.29 (39), p.395501-395501
Hauptverfasser:	Jamdagni, Pooja, Kumar, Ashok, Thakur, Anil, Pandey, Ravindra, Ahluwalia, P K
Format:	Artikel
Sprache:	eng
Schlagworte:	BTH formulation characterstics DFT monolayers Stone-Wales
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!