Detailed band alignment of high-B-composition BGaN with GaN and AlN

The electronic structure of B 0.097 Ga 0.903 N was determined by examining its bandgap and valence band offset (VBO) in detail. The BGaN sample was grown using a horizontal reactor metalorganic chemical vapor deposition. For bandgap determination, three different techniques were utilized yielding si...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2023-09, Vol.56 (38), p.385305
Hauptverfasser:	AlQatari, F, Liao, C-H, Aguileta-Vazquez, R R, Tang, X, Lopatin, S, Li, X
Format:	Artikel
Sprache:	eng
Schlagworte:	band alignment BGaN XPS
Online-Zugang:	Volltext
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