Optical evidence of many-body effects in the zincblende Al xGa 1−xN alloy system

We present a quantitative description of the change in optical properties of zincblende aluminium-gallium-nitride thin films dependent on the free-carrier concentration due to band filling and renormalization effects. Free-electron concentrations above 1020 cm−3 in GaN are achieved by introducing ge...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2021-01, Vol.54 (2)
Hauptverfasser:	Baron, Elias, Feneberg, Martin, Goldhahn, Rüdiger, Deppe, Michael, Tacken, Fabian, As, Donat J
Format:	Artikel
Sprache:	eng
Schlagworte:	cubic nitrides doped semiconductors ellipsometry kp method
Online-Zugang:	Volltext
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