Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers

Current increases in vertical-geometry Ga2O3 rectifiers during electron-beam-induced current measurements are dominated by the impact ionization of deep acceptors in the depletion region. At room temperature, mobile hole diffusion in the quasi-neutral region of Schottky diodes contributes significan...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2020-12, Vol.53 (49)
Hauptverfasser:	Yakimov, E B, Polyakov, A Y, Smirnov, N B, Shchemerov, I V, Vergeles, P S, Yakimov, E E, Chernykh, A V, Xian, Minghan, Ren, F, Pearton, S J
Format:	Artikel
Sprache:	eng
Schlagworte:	gallium oxide impact ionization rectifiers
Online-Zugang:	Volltext
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