Optical properties of metamorphic type-I InAs1−xSbx/Aly In1−y As quantum wells grown on GaAs for the mid-infrared spectral range

We analyse the optical properties of InAs1−xSbx/Aly In1−y As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Aly In1−y As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Aly In1−y As MBLs allows for the growth of QWs having large type-I band offsets, and emission wa...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2019-11, Vol.52 (46)
Hauptverfasser:	Repiso, Eva, Broderick, Christopher A, de la Mata, Maria, Arkani, Reza, Lu, Qi, Marshall, Andrew R J, Molina, Sergio I, O'Reilly, Eoin P, Carrington, Peter J, Krier, Anthony
Format:	Artikel
Sprache:	eng
Schlagworte:	light-emitting diode metamorphic heterostructure mid-infrared modelling molecular beam epitaxy photonics semiconductors
Online-Zugang:	Volltext
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