Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies
The presence of occupied intra-band gap states in oxygen-deficient tin dioxide (SnOx; 1
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2018-07, Vol.51 (31) |
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| container_title | Journal of physics. D, Applied physics |
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| creator | Grz dziel, Lucyna Krzywiecki, Maciej Szwajca, Anna Sarfraz, Adnan Genchev, Georgi Erbe, Andreas |
| description | The presence of occupied intra-band gap states in oxygen-deficient tin dioxide (SnOx; 1 |
| doi_str_mv | 10.1088/1361-6463/aacf3a |
| format | Article |
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Former experimental determination of these states was conducted for well-defined, usually thick tin oxides obtained under highly controlled vacuum conditions. In this work, we present precise specification of gap defects states for ultra-thin SnOx layers prepared by sol-gel synthesis followed with spin-coat deposition. Post-deposition drying and annealing processing changed layers' surface morphology and bulk crystalline structure as monitored by scanning electron microscopy, atomic force microscopy and x-ray diffraction. An x-ray photoemission spectroscopy (XPS) analysis of chemical composition revealed the presence of both Sn2+ and Sn4+ species in layers with and without post-drying annealing step. A stronger contribution of SnO was found for dried SnOx. In the valence band region, XPS studies revealed pronounced O 2p and hybridised Sn 5p/5s-O 2p states as well as deep, overlapping with the O 2p, band gap states resulting from Sn 5s orbitals. These states-attributed to defect states-indicated enhanced presence of Sn2+ cations, and were assigned to 'bridging' oxygen vacancies. Complementary photoemission yield spectroscopy (PYS) studies of the SnOx band gap region revealed an increased effective density of occupied electronic states below the Fermi level EF for annealed layers. The consequence was a work function reduction by 0.15 eV after the annealing process. PYS results allowed a precise detection of SnOx shallow band gap states close to EF. These states were attributed to surface oxygen vacancies, which was confirmed by computer modelling. Finally, the annealed layers exhibited higher calculated charge carrier concentration, hence the increased n-type character.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/1361-6463/aacf3a</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>band gap states ; defect states ; oxygen vacancies ; photoemission spectroscopies ; tin oxides</subject><ispartof>Journal of physics. D, Applied physics, 2018-07, Vol.51 (31)</ispartof><rights>2018 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-6151-8810</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6463/aacf3a/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Grz dziel, Lucyna</creatorcontrib><creatorcontrib>Krzywiecki, Maciej</creatorcontrib><creatorcontrib>Szwajca, Anna</creatorcontrib><creatorcontrib>Sarfraz, Adnan</creatorcontrib><creatorcontrib>Genchev, Georgi</creatorcontrib><creatorcontrib>Erbe, Andreas</creatorcontrib><title>Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies</title><title>Journal of physics. D, Applied physics</title><addtitle>JPhysD</addtitle><addtitle>J. Phys. D: Appl. Phys</addtitle><description>The presence of occupied intra-band gap states in oxygen-deficient tin dioxide (SnOx; 1 < x < 2) is crucial for efficient manufacturing of multipurpose electronic devices based on transparent conducting oxides. Former experimental determination of these states was conducted for well-defined, usually thick tin oxides obtained under highly controlled vacuum conditions. In this work, we present precise specification of gap defects states for ultra-thin SnOx layers prepared by sol-gel synthesis followed with spin-coat deposition. Post-deposition drying and annealing processing changed layers' surface morphology and bulk crystalline structure as monitored by scanning electron microscopy, atomic force microscopy and x-ray diffraction. An x-ray photoemission spectroscopy (XPS) analysis of chemical composition revealed the presence of both Sn2+ and Sn4+ species in layers with and without post-drying annealing step. A stronger contribution of SnO was found for dried SnOx. In the valence band region, XPS studies revealed pronounced O 2p and hybridised Sn 5p/5s-O 2p states as well as deep, overlapping with the O 2p, band gap states resulting from Sn 5s orbitals. These states-attributed to defect states-indicated enhanced presence of Sn2+ cations, and were assigned to 'bridging' oxygen vacancies. Complementary photoemission yield spectroscopy (PYS) studies of the SnOx band gap region revealed an increased effective density of occupied electronic states below the Fermi level EF for annealed layers. The consequence was a work function reduction by 0.15 eV after the annealing process. PYS results allowed a precise detection of SnOx shallow band gap states close to EF. These states were attributed to surface oxygen vacancies, which was confirmed by computer modelling. Finally, the annealed layers exhibited higher calculated charge carrier concentration, hence the increased n-type character.</description><subject>band gap states</subject><subject>defect states</subject><subject>oxygen vacancies</subject><subject>photoemission spectroscopies</subject><subject>tin oxides</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNptUE1LxDAQDaJgXb17zMmTcfPRpulR1k9Y2IN6DpMmWbuUpDYR3H9v64onYWA-3nszzEPoktEbRpVaMiEZkaUUS4DWCzhCxd_oGBWUck5EzetTdJbSjlJaScUK9HHnsmtzFwOOHnchj0AMBIu3MGDr_IQlnDJklyYUp6ELpI1Ta3GKPdm6Hr-EzRcOEGIPezcmbPZ4eI85un4Sj3EW_RSpjUPn0jk68dAnd_GbF-jt4f519UTWm8fn1e2adJyLTMCYqrGqbWQJTJaiFlQ66cGbplRAraRVIyTnVQ2sNKDq0oFyDmQ7fV8bLxbo-rC3i4Pexc8xTNc0o3q2S8_e6NkbfbBrol_9Q7e6YlrMUQnK9GC9-Aa5nG28</recordid><startdate>20180711</startdate><enddate>20180711</enddate><creator>Grz dziel, Lucyna</creator><creator>Krzywiecki, Maciej</creator><creator>Szwajca, Anna</creator><creator>Sarfraz, Adnan</creator><creator>Genchev, Georgi</creator><creator>Erbe, Andreas</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><orcidid>https://orcid.org/0000-0002-6151-8810</orcidid></search><sort><creationdate>20180711</creationdate><title>Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies</title><author>Grz dziel, Lucyna ; Krzywiecki, Maciej ; Szwajca, Anna ; Sarfraz, Adnan ; Genchev, Georgi ; Erbe, Andreas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i223t-abb59d8c964a16437306e6fafb948a0d6059362257a14ba874ea8eea6ccf37bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>band gap states</topic><topic>defect states</topic><topic>oxygen vacancies</topic><topic>photoemission spectroscopies</topic><topic>tin oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grz dziel, Lucyna</creatorcontrib><creatorcontrib>Krzywiecki, Maciej</creatorcontrib><creatorcontrib>Szwajca, Anna</creatorcontrib><creatorcontrib>Sarfraz, Adnan</creatorcontrib><creatorcontrib>Genchev, Georgi</creatorcontrib><creatorcontrib>Erbe, Andreas</creatorcontrib><collection>Institute of Physics Open Access Journal Titles</collection><collection>IOPscience (Open Access)</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Grz dziel, Lucyna</au><au>Krzywiecki, Maciej</au><au>Szwajca, Anna</au><au>Sarfraz, Adnan</au><au>Genchev, Georgi</au><au>Erbe, Andreas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><stitle>JPhysD</stitle><addtitle>J. Phys. D: Appl. Phys</addtitle><date>2018-07-11</date><risdate>2018</risdate><volume>51</volume><issue>31</issue><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>The presence of occupied intra-band gap states in oxygen-deficient tin dioxide (SnOx; 1 < x < 2) is crucial for efficient manufacturing of multipurpose electronic devices based on transparent conducting oxides. Former experimental determination of these states was conducted for well-defined, usually thick tin oxides obtained under highly controlled vacuum conditions. In this work, we present precise specification of gap defects states for ultra-thin SnOx layers prepared by sol-gel synthesis followed with spin-coat deposition. Post-deposition drying and annealing processing changed layers' surface morphology and bulk crystalline structure as monitored by scanning electron microscopy, atomic force microscopy and x-ray diffraction. An x-ray photoemission spectroscopy (XPS) analysis of chemical composition revealed the presence of both Sn2+ and Sn4+ species in layers with and without post-drying annealing step. A stronger contribution of SnO was found for dried SnOx. In the valence band region, XPS studies revealed pronounced O 2p and hybridised Sn 5p/5s-O 2p states as well as deep, overlapping with the O 2p, band gap states resulting from Sn 5s orbitals. These states-attributed to defect states-indicated enhanced presence of Sn2+ cations, and were assigned to 'bridging' oxygen vacancies. Complementary photoemission yield spectroscopy (PYS) studies of the SnOx band gap region revealed an increased effective density of occupied electronic states below the Fermi level EF for annealed layers. The consequence was a work function reduction by 0.15 eV after the annealing process. PYS results allowed a precise detection of SnOx shallow band gap states close to EF. These states were attributed to surface oxygen vacancies, which was confirmed by computer modelling. Finally, the annealed layers exhibited higher calculated charge carrier concentration, hence the increased n-type character.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-6463/aacf3a</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-6151-8810</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | Institute of Physics Journals |
| subjects | band gap states defect states oxygen vacancies photoemission spectroscopies tin oxides |
| title | Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies |
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