Electron mobility in oxide heterostructures

Next-generation integrated circuit devices based on transition-metal-oxides are expected to boast a variety of extraordinary properties, such as superconductivity, transparency in the visible range, thermoelectricity, giant ionic conductivity and ferromagnetism. However, the realisation of this so-c...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2018-07, Vol.51 (29), p.293002
Hauptverfasser:	Trier, F, Christensen, D V, Pryds, N
Format:	Artikel
Sprache:	eng
Schlagworte:	electron mobility hole mobility oxide heterostructures oxides SrTiO ZnO
Online-Zugang:	Volltext
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