Plasma emission spectroscopy and its relation to the refractive index of silicon nitride thin films deposited by reactive magnetron sputtering

In this work, we present a thorough study on the relation between the plasma emission and the change of the silicon nitride thin films refractive index. Thin films were grown by reactive magnetron direct current sputtering technique and deposited onto silicon wafers at different fluxes of Ar and N2...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2018-03, Vol.51 (9), p.95203
Hauptverfasser: Sanginés, R, Abundiz-Cisneros, N, Hernández Utrera, O, Diliegros-Godines, C, Machorro-Mejía, R
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Sprache:eng
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