Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1)

We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0 0 0 1) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2017-10, Vol.50 (40), p.405101
Hauptverfasser:	Sabelfeld, Karl K, Kaganer, Vladimir M, Pfüller, Carsten, Brandt, Oliver
Format:	Artikel
Sprache:	eng
Schlagworte:	cathodoluminescence dislocation EBIC GaN
Online-Zugang:	Volltext
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