Optical characterization of type-I to type-II band alignment transition in GaAs/AlxGa1−xAs quantum rings grown by droplet epitaxy

Optical properties of GaAs/AlxGa1−xAs quantum rings (QRs) grown on GaAs (1 0 0) by droplet epitaxy have been investigated as a function of the Al-composition in the AlxGa1−xAs barrier. A transition from type-I to type-II band alignment is observed for the QRs via photoluminescence (PL) and time-reso...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2017-07, Vol.50 (32)
Hauptverfasser:	Su, Linlin, Wang, Ying, Guo, Qinglin, Li, Xiaowei, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I, Ware, Morgan E, Salamo, Gregory J, Liang, Baolai, Huffaker, Diana L
Format:	Artikel
Sprache:	eng
Schlagworte:	band alignment carrier lifetime droplet epitaxy photoluminescence quantum rings
Online-Zugang:	Volltext
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