Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quant...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2017-02, Vol.50 (5), p.55103
Hauptverfasser:	Perozek, J, Lee, H-P, Krishnan, B, Paranjpe, A, Reuter, K B, Sadana, D K, Bayram, C
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Hall effect high electron mobility transistor mobility silicon transmission electron microscopy x-ray diffraction
Online-Zugang:	Volltext
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