High-power pulsed laser diodes emitting in the range
This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a re...
Gespeichert in:
| Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2013, Vol.43 (9), p.819-821 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 821 |
|---|---|
| container_issue | 9 |
| container_start_page | 819 |
| container_title | Quantum electronics (Woodbury, N.Y.) |
| container_volume | 43 |
| creator | Gorlachuk, P.V. Ryaboshtan, Yu.L. Ladugin, M.A. Padalitsa, A.A. Marmalyuk, A.A. Kurnosov, V.D. Kurnosov, K.V. Zhuravleva, O.V. Romantsevich, V.I. Chernov, R.V. Ivanov, A.V. Simakov, V.A. |
| description | This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures. |
| doi_str_mv | 10.1070/QE2013v043n09ABEH015284 |
| format | Article |
| fullrecord | <record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1070_QE2013v043n09ABEH015284</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1070/QE2013v043n09ABEH015284</sourcerecordid><originalsourceid>FETCH-iop_journals_10_1070_QE2013v043n09ABEH0152843</originalsourceid><addsrcrecordid>eNqdTr0OgjAYbIwmEuQZ7OCKfqUF2lENhsGFxL3BUKAGC6Ggry8mjro43U_uLofQmsCWQAy7LAmA0AcwakDsD0kKJAw4myGHsIj7LBZiPnGIqB9zwpfIs1ZfIWQMQh5xB7FUV7XftU_V425srCpwk9tJFLotlMXqrodBmwprg4da4T43lVqhRZlPWe-DLqKn5HJMfd128taOvZlcSUC-P8ofH6mLNl9aWXKWjEohORGyK0r63_gL2SZQcw</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-power pulsed laser diodes emitting in the range</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Gorlachuk, P.V. ; Ryaboshtan, Yu.L. ; Ladugin, M.A. ; Padalitsa, A.A. ; Marmalyuk, A.A. ; Kurnosov, V.D. ; Kurnosov, K.V. ; Zhuravleva, O.V. ; Romantsevich, V.I. ; Chernov, R.V. ; Ivanov, A.V. ; Simakov, V.A.</creator><creatorcontrib>Gorlachuk, P.V. ; Ryaboshtan, Yu.L. ; Ladugin, M.A. ; Padalitsa, A.A. ; Marmalyuk, A.A. ; Kurnosov, V.D. ; Kurnosov, K.V. ; Zhuravleva, O.V. ; Romantsevich, V.I. ; Chernov, R.V. ; Ivanov, A.V. ; Simakov, V.A.</creatorcontrib><description>This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.</description><identifier>ISSN: 1063-7818</identifier><identifier>EISSN: 1468-4799</identifier><identifier>DOI: 10.1070/QE2013v043n09ABEH015284</identifier><language>eng</language><publisher>Turpion Ltd and the Russian Academy of Sciences</publisher><subject>laser diode ; metal-organic vapour phase epitaxy ; spectral range 1.5-1.6 μm</subject><ispartof>Quantum electronics (Woodbury, N.Y.), 2013, Vol.43 (9), p.819-821</ispartof><rights>2013 Kvantovaya Elektronika and Turpion Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1070/QE2013v043n09ABEH015284/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,4010,27900,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Gorlachuk, P.V.</creatorcontrib><creatorcontrib>Ryaboshtan, Yu.L.</creatorcontrib><creatorcontrib>Ladugin, M.A.</creatorcontrib><creatorcontrib>Padalitsa, A.A.</creatorcontrib><creatorcontrib>Marmalyuk, A.A.</creatorcontrib><creatorcontrib>Kurnosov, V.D.</creatorcontrib><creatorcontrib>Kurnosov, K.V.</creatorcontrib><creatorcontrib>Zhuravleva, O.V.</creatorcontrib><creatorcontrib>Romantsevich, V.I.</creatorcontrib><creatorcontrib>Chernov, R.V.</creatorcontrib><creatorcontrib>Ivanov, A.V.</creatorcontrib><creatorcontrib>Simakov, V.A.</creatorcontrib><title>High-power pulsed laser diodes emitting in the range</title><title>Quantum electronics (Woodbury, N.Y.)</title><addtitle>QEL</addtitle><addtitle>Quantum Electron</addtitle><description>This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.</description><subject>laser diode</subject><subject>metal-organic vapour phase epitaxy</subject><subject>spectral range 1.5-1.6 μm</subject><issn>1063-7818</issn><issn>1468-4799</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqdTr0OgjAYbIwmEuQZ7OCKfqUF2lENhsGFxL3BUKAGC6Ggry8mjro43U_uLofQmsCWQAy7LAmA0AcwakDsD0kKJAw4myGHsIj7LBZiPnGIqB9zwpfIs1ZfIWQMQh5xB7FUV7XftU_V425srCpwk9tJFLotlMXqrodBmwprg4da4T43lVqhRZlPWe-DLqKn5HJMfd128taOvZlcSUC-P8ofH6mLNl9aWXKWjEohORGyK0r63_gL2SZQcw</recordid><startdate>2013</startdate><enddate>2013</enddate><creator>Gorlachuk, P.V.</creator><creator>Ryaboshtan, Yu.L.</creator><creator>Ladugin, M.A.</creator><creator>Padalitsa, A.A.</creator><creator>Marmalyuk, A.A.</creator><creator>Kurnosov, V.D.</creator><creator>Kurnosov, K.V.</creator><creator>Zhuravleva, O.V.</creator><creator>Romantsevich, V.I.</creator><creator>Chernov, R.V.</creator><creator>Ivanov, A.V.</creator><creator>Simakov, V.A.</creator><general>Turpion Ltd and the Russian Academy of Sciences</general><scope/></search><sort><creationdate>2013</creationdate><title>High-power pulsed laser diodes emitting in the range</title><author>Gorlachuk, P.V. ; Ryaboshtan, Yu.L. ; Ladugin, M.A. ; Padalitsa, A.A. ; Marmalyuk, A.A. ; Kurnosov, V.D. ; Kurnosov, K.V. ; Zhuravleva, O.V. ; Romantsevich, V.I. ; Chernov, R.V. ; Ivanov, A.V. ; Simakov, V.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-iop_journals_10_1070_QE2013v043n09ABEH0152843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>laser diode</topic><topic>metal-organic vapour phase epitaxy</topic><topic>spectral range 1.5-1.6 μm</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gorlachuk, P.V.</creatorcontrib><creatorcontrib>Ryaboshtan, Yu.L.</creatorcontrib><creatorcontrib>Ladugin, M.A.</creatorcontrib><creatorcontrib>Padalitsa, A.A.</creatorcontrib><creatorcontrib>Marmalyuk, A.A.</creatorcontrib><creatorcontrib>Kurnosov, V.D.</creatorcontrib><creatorcontrib>Kurnosov, K.V.</creatorcontrib><creatorcontrib>Zhuravleva, O.V.</creatorcontrib><creatorcontrib>Romantsevich, V.I.</creatorcontrib><creatorcontrib>Chernov, R.V.</creatorcontrib><creatorcontrib>Ivanov, A.V.</creatorcontrib><creatorcontrib>Simakov, V.A.</creatorcontrib><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gorlachuk, P.V.</au><au>Ryaboshtan, Yu.L.</au><au>Ladugin, M.A.</au><au>Padalitsa, A.A.</au><au>Marmalyuk, A.A.</au><au>Kurnosov, V.D.</au><au>Kurnosov, K.V.</au><au>Zhuravleva, O.V.</au><au>Romantsevich, V.I.</au><au>Chernov, R.V.</au><au>Ivanov, A.V.</au><au>Simakov, V.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power pulsed laser diodes emitting in the range</atitle><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle><stitle>QEL</stitle><addtitle>Quantum Electron</addtitle><date>2013</date><risdate>2013</risdate><volume>43</volume><issue>9</issue><spage>819</spage><epage>821</epage><pages>819-821</pages><issn>1063-7818</issn><eissn>1468-4799</eissn><abstract>This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.</abstract><pub>Turpion Ltd and the Russian Academy of Sciences</pub><doi>10.1070/QE2013v043n09ABEH015284</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7818 |
| ispartof | Quantum electronics (Woodbury, N.Y.), 2013, Vol.43 (9), p.819-821 |
| issn | 1063-7818 1468-4799 |
| language | eng |
| recordid | cdi_iop_journals_10_1070_QE2013v043n09ABEH015284 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | laser diode metal-organic vapour phase epitaxy spectral range 1.5-1.6 μm |
| title | High-power pulsed laser diodes emitting in the range |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T12%3A40%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-power%20pulsed%20laser%20diodes%20emitting%20in%20the%20range&rft.jtitle=Quantum%20electronics%20(Woodbury,%20N.Y.)&rft.au=Gorlachuk,%20P.V.&rft.date=2013&rft.volume=43&rft.issue=9&rft.spage=819&rft.epage=821&rft.pages=819-821&rft.issn=1063-7818&rft.eissn=1468-4799&rft_id=info:doi/10.1070/QE2013v043n09ABEH015284&rft_dat=%3Ciop%3E10.1070/QE2013v043n09ABEH015284%3C/iop%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |