$Demonstration of a high-performance SiGe alloy channel considering Ge fraction, Dit and BTB leakage$

Demonstration of a high-performance SiGe alloy channel considering Ge fraction, Dit and BTB leakage

The electrical properties of a SiGe alloy channel from Si to Ge, for electron and hole mobilities are investigated. Although SiGe NMOS shows degraded electron mobility until 85% because of alloy scattering, abrupt mobility improvement with the high composition SiGe channel is observed because of a b...

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Veröffentlicht in:	Electronics letters 2019-10, Vol.55 (20), p.1106-1108
Hauptverfasser:	Bae, D.-I, Choi, B.D
Format:	Artikel
Sprache:	eng
Schlagworte:	alloy PMOS alloy scattering band structure band structure modification band‐to‐band leakage degradation BTB leakage capacitance reduction conduction band offset conduction bands degraded sub‐threshold swing electrical properties electron mobility elemental semiconductors germanium concentration germanium concentration effect germanium mole fraction Ge‐Si alloys high composition silicon germanium channel high interface trap high‐performance silicon germanium alloy channel hole mobility interface states linearly improved hole mobility MOSFET N‐channel MOS off‐current target on‐current gain on‐current gain matching off‐current target P‐channel MOS semiconductor device reliability semiconductor materials Semiconductor technology SiGe
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