260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology

A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplify...

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Veröffentlicht in:	Electronics letters 2017-02, Vol.53 (3), p.194-196
Hauptverfasser:	Yoon, D, Seo, M.-G, Song, K, Kaynak, M, Tillack, B, Rieh, J.-S
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification amplifier instability amplifier peak gain Baluns base bias voltage tuning Bypasses DC power dissipation differential amplifier differential amplifiers frequency 260 GHz gain 15 dB Ge‐Si alloys Heterojunction bipolar transistors Instability parasitic base inductance passive shunt transistor pair power 112 mW Semiconductor devices semiconductor materials Semiconductor technology shunt transistor pair SiGe Silicon germanides silicon germanium HBT technology submillimetre wave amplifiers terahertz wave devices three‐stage differential cascade topology transistor pair amplification Transistors
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Beschreibung
Zusammenfassung:	A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 × 160 μm2 excluding Baluns and probing pads.
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2016.3882