GaAs quantum well-dots solar cells with spectral response extended to 1100 nm

Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers al...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Electronics letters 2015-10, Vol.51 (20), p.1602-1604
Hauptverfasser:	Mintairov, S.A, Kalyuzhnyy, N.A, Maximov, M.V, Nadtochiy, A.M, Rouvimov, S, Zhukov, A.E
Format:	Artikel
Sprache:	eng
Schlagworte:	absorption GaAs gallium arsenide hybrid quantum well dots III‐V semiconductors indium compounds InGaAs nanostructure nanostructured materials photoconductivity photocurrent photosensitivity spectrum expansion pin junction Power electronics, energy conversion and sustainability quantum well devices quantum well dot solar cells QWD multilayer media semiconductor quantum dots semiconductor quantum wells solar cells spectral interval spectral response terrestrial spectrum wavelength 900 nm to 1100 nm wide band gap semiconductors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!