GaAs quantum well-dots solar cells with spectral response extended to 1100 nm
Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers al...
Gespeichert in:
| Veröffentlicht in: | Electronics letters 2015-10, Vol.51 (20), p.1602-1604 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1604 |
|---|---|
| container_issue | 20 |
| container_start_page | 1602 |
| container_title | Electronics letters |
| container_volume | 51 |
| creator | Mintairov, S.A Kalyuzhnyy, N.A Maximov, M.V Nadtochiy, A.M Rouvimov, S Zhukov, A.E |
| description | Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers alternated with GaAs spacers can be inserted in an i-region of the GaAs p–i–n junction without impairing its crystal quality and quantum efficiency in spectral interval of GaAs absorption. The QWD layers are responsible for appearance of a longer wave spectral response (900–1100 nm). A photocurrent increment as high as 4.6 (5.2) mA/cm2 for terrestrial (space) spectrum is demonstrated. |
| doi_str_mv | 10.1049/el.2015.2481 |
| format | Article |
| fullrecord | <record><control><sourceid>wiley_24P</sourceid><recordid>TN_cdi_iet_journals_10_1049_el_2015_2481</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ELL2BF03004</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3434-9864259063a4509f2b1b8469c70dffd483f1b7f7aca0ba3a816eef1d4eef03443</originalsourceid><addsrcrecordid>eNp9kD1PwzAQQC0EElXpxg_wwMBAyl3spMlYqrYgBbGAxGY5yVkEuUmwE5X-exKVgaFiudNJ774eY9cIcwSZ3pOdh4DRPJQJnrEJigiCFPH9nE0AUAQRpvKSzbyvckCJMgaJE_a81UvPv3pdd_2O78naoGw6z31jtePFUHu-r7oP7lsqOqctd-TbpvbE6bujuqSSdw1HBOD17opdGG09zX7zlL1t1q-rxyB72T6tlllQCClkkCaxDKMUYqFlBKkJc8wTGafFAkpjSpkIg_nCLHShIddCJxgTGSzlEEFIKabs7ji3cI33joxqXbXT7qAQ1GhDkVWjDTXaGPDoiO8rS4d_WbXOsvBhAwJgXHNz7KuoU59N7-rhqYH4g7elGbDbE9jJS34AEr56Mw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>GaAs quantum well-dots solar cells with spectral response extended to 1100 nm</title><source>Wiley Online Library (Open Access Collection)</source><creator>Mintairov, S.A ; Kalyuzhnyy, N.A ; Maximov, M.V ; Nadtochiy, A.M ; Rouvimov, S ; Zhukov, A.E</creator><creatorcontrib>Mintairov, S.A ; Kalyuzhnyy, N.A ; Maximov, M.V ; Nadtochiy, A.M ; Rouvimov, S ; Zhukov, A.E</creatorcontrib><description>Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers alternated with GaAs spacers can be inserted in an i-region of the GaAs p–i–n junction without impairing its crystal quality and quantum efficiency in spectral interval of GaAs absorption. The QWD layers are responsible for appearance of a longer wave spectral response (900–1100 nm). A photocurrent increment as high as 4.6 (5.2) mA/cm2 for terrestrial (space) spectrum is demonstrated.</description><identifier>ISSN: 0013-5194</identifier><identifier>ISSN: 1350-911X</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el.2015.2481</identifier><language>eng</language><publisher>The Institution of Engineering and Technology</publisher><subject>absorption ; GaAs ; gallium arsenide ; hybrid quantum well dots ; III‐V semiconductors ; indium compounds ; InGaAs ; nanostructure ; nanostructured materials ; photoconductivity ; photocurrent ; photosensitivity spectrum expansion ; pin junction ; Power electronics, energy conversion and sustainability ; quantum well devices ; quantum well dot solar cells ; QWD multilayer media ; semiconductor quantum dots ; semiconductor quantum wells ; solar cells ; spectral interval ; spectral response ; terrestrial spectrum ; wavelength 900 nm to 1100 nm ; wide band gap semiconductors</subject><ispartof>Electronics letters, 2015-10, Vol.51 (20), p.1602-1604</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2020 The Institution of Engineering and Technology</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3434-9864259063a4509f2b1b8469c70dffd483f1b7f7aca0ba3a816eef1d4eef03443</citedby><cites>FETCH-LOGICAL-c3434-9864259063a4509f2b1b8469c70dffd483f1b7f7aca0ba3a816eef1d4eef03443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fel.2015.2481$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fel.2015.2481$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,11562,27924,27925,45574,45575,46052,46476</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fel.2015.2481$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc></links><search><creatorcontrib>Mintairov, S.A</creatorcontrib><creatorcontrib>Kalyuzhnyy, N.A</creatorcontrib><creatorcontrib>Maximov, M.V</creatorcontrib><creatorcontrib>Nadtochiy, A.M</creatorcontrib><creatorcontrib>Rouvimov, S</creatorcontrib><creatorcontrib>Zhukov, A.E</creatorcontrib><title>GaAs quantum well-dots solar cells with spectral response extended to 1100 nm</title><title>Electronics letters</title><description>Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers alternated with GaAs spacers can be inserted in an i-region of the GaAs p–i–n junction without impairing its crystal quality and quantum efficiency in spectral interval of GaAs absorption. The QWD layers are responsible for appearance of a longer wave spectral response (900–1100 nm). A photocurrent increment as high as 4.6 (5.2) mA/cm2 for terrestrial (space) spectrum is demonstrated.</description><subject>absorption</subject><subject>GaAs</subject><subject>gallium arsenide</subject><subject>hybrid quantum well dots</subject><subject>III‐V semiconductors</subject><subject>indium compounds</subject><subject>InGaAs</subject><subject>nanostructure</subject><subject>nanostructured materials</subject><subject>photoconductivity</subject><subject>photocurrent</subject><subject>photosensitivity spectrum expansion</subject><subject>pin junction</subject><subject>Power electronics, energy conversion and sustainability</subject><subject>quantum well devices</subject><subject>quantum well dot solar cells</subject><subject>QWD multilayer media</subject><subject>semiconductor quantum dots</subject><subject>semiconductor quantum wells</subject><subject>solar cells</subject><subject>spectral interval</subject><subject>spectral response</subject><subject>terrestrial spectrum</subject><subject>wavelength 900 nm to 1100 nm</subject><subject>wide band gap semiconductors</subject><issn>0013-5194</issn><issn>1350-911X</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQQC0EElXpxg_wwMBAyl3spMlYqrYgBbGAxGY5yVkEuUmwE5X-exKVgaFiudNJ774eY9cIcwSZ3pOdh4DRPJQJnrEJigiCFPH9nE0AUAQRpvKSzbyvckCJMgaJE_a81UvPv3pdd_2O78naoGw6z31jtePFUHu-r7oP7lsqOqctd-TbpvbE6bujuqSSdw1HBOD17opdGG09zX7zlL1t1q-rxyB72T6tlllQCClkkCaxDKMUYqFlBKkJc8wTGafFAkpjSpkIg_nCLHShIddCJxgTGSzlEEFIKabs7ji3cI33joxqXbXT7qAQ1GhDkVWjDTXaGPDoiO8rS4d_WbXOsvBhAwJgXHNz7KuoU59N7-rhqYH4g7elGbDbE9jJS34AEr56Mw</recordid><startdate>20151001</startdate><enddate>20151001</enddate><creator>Mintairov, S.A</creator><creator>Kalyuzhnyy, N.A</creator><creator>Maximov, M.V</creator><creator>Nadtochiy, A.M</creator><creator>Rouvimov, S</creator><creator>Zhukov, A.E</creator><general>The Institution of Engineering and Technology</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20151001</creationdate><title>GaAs quantum well-dots solar cells with spectral response extended to 1100 nm</title><author>Mintairov, S.A ; Kalyuzhnyy, N.A ; Maximov, M.V ; Nadtochiy, A.M ; Rouvimov, S ; Zhukov, A.E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3434-9864259063a4509f2b1b8469c70dffd483f1b7f7aca0ba3a816eef1d4eef03443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>absorption</topic><topic>GaAs</topic><topic>gallium arsenide</topic><topic>hybrid quantum well dots</topic><topic>III‐V semiconductors</topic><topic>indium compounds</topic><topic>InGaAs</topic><topic>nanostructure</topic><topic>nanostructured materials</topic><topic>photoconductivity</topic><topic>photocurrent</topic><topic>photosensitivity spectrum expansion</topic><topic>pin junction</topic><topic>Power electronics, energy conversion and sustainability</topic><topic>quantum well devices</topic><topic>quantum well dot solar cells</topic><topic>QWD multilayer media</topic><topic>semiconductor quantum dots</topic><topic>semiconductor quantum wells</topic><topic>solar cells</topic><topic>spectral interval</topic><topic>spectral response</topic><topic>terrestrial spectrum</topic><topic>wavelength 900 nm to 1100 nm</topic><topic>wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mintairov, S.A</creatorcontrib><creatorcontrib>Kalyuzhnyy, N.A</creatorcontrib><creatorcontrib>Maximov, M.V</creatorcontrib><creatorcontrib>Nadtochiy, A.M</creatorcontrib><creatorcontrib>Rouvimov, S</creatorcontrib><creatorcontrib>Zhukov, A.E</creatorcontrib><collection>CrossRef</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mintairov, S.A</au><au>Kalyuzhnyy, N.A</au><au>Maximov, M.V</au><au>Nadtochiy, A.M</au><au>Rouvimov, S</au><au>Zhukov, A.E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaAs quantum well-dots solar cells with spectral response extended to 1100 nm</atitle><jtitle>Electronics letters</jtitle><date>2015-10-01</date><risdate>2015</risdate><volume>51</volume><issue>20</issue><spage>1602</spage><epage>1604</epage><pages>1602-1604</pages><issn>0013-5194</issn><issn>1350-911X</issn><eissn>1350-911X</eissn><abstract>Expanding the photosensitivity spectrum of a single-junction GaAs-based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In0.3Ga0.7As quantum wells with modulation of thickness and composition. Up to 15 QWD layers alternated with GaAs spacers can be inserted in an i-region of the GaAs p–i–n junction without impairing its crystal quality and quantum efficiency in spectral interval of GaAs absorption. The QWD layers are responsible for appearance of a longer wave spectral response (900–1100 nm). A photocurrent increment as high as 4.6 (5.2) mA/cm2 for terrestrial (space) spectrum is demonstrated.</abstract><pub>The Institution of Engineering and Technology</pub><doi>10.1049/el.2015.2481</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2015-10, Vol.51 (20), p.1602-1604 |
| issn | 0013-5194 1350-911X 1350-911X |
| language | eng |
| recordid | cdi_iet_journals_10_1049_el_2015_2481 |
| source | Wiley Online Library (Open Access Collection) |
| subjects | absorption GaAs gallium arsenide hybrid quantum well dots III‐V semiconductors indium compounds InGaAs nanostructure nanostructured materials photoconductivity photocurrent photosensitivity spectrum expansion pin junction Power electronics, energy conversion and sustainability quantum well devices quantum well dot solar cells QWD multilayer media semiconductor quantum dots semiconductor quantum wells solar cells spectral interval spectral response terrestrial spectrum wavelength 900 nm to 1100 nm wide band gap semiconductors |
| title | GaAs quantum well-dots solar cells with spectral response extended to 1100 nm |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T23%3A03%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_24P&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GaAs%20quantum%20well-dots%20solar%20cells%20with%20spectral%20response%20extended%20to%201100%20nm&rft.jtitle=Electronics%20letters&rft.au=Mintairov,%20S.A&rft.date=2015-10-01&rft.volume=51&rft.issue=20&rft.spage=1602&rft.epage=1604&rft.pages=1602-1604&rft.issn=0013-5194&rft.eissn=1350-911X&rft_id=info:doi/10.1049/el.2015.2481&rft_dat=%3Cwiley_24P%3EELL2BF03004%3C/wiley_24P%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |