Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature

GaSb-based type-I quantum well laterally coupled distributed feedback diode lasers emitting in the methane absorption band near 3.27 µm were designed and fabricated. The first-order index grating with a period of 480 nm was defined by e-beam lithography and etched on both sides of 6 µm-wide shallow...

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Veröffentlicht in:	Electronics letters 2014-09, Vol.50 (19), p.1378-1380
Hauptverfasser:	Liang, R, Hosoda, T, Shterengas, L, Stein, A, Lu, M, Kipshidze, G, Belenky, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Bragg wavelength temperature tuning rate continuous wave output power diffraction gratings distributed feedback lasers electron beam lithography e‐beam lithography first‐order index grating gallium compounds GaSb III‐V semiconductors laser tuning methane absorption band organic compounds Photonics power 15 mW to 40 mW quantum well lasers ridge waveguides shallow ridge waveguide size 2 mm temperature 17 degC to ‐20 degC temperature 293 K to 298 K type‐I quantum well laterally coupled distributed feedback diode lasers wavelength 3.27 mum
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