A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage

A major roadblock for the integration of ferroelectric-field-effect transistors (FEFETs) at advanced technology nodes for embedded memory applications is their high, logic-incompatible write voltages. Herein, we explore Ge as a channel material to reduce write voltage of FEFET and report the first d...

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Veröffentlicht in:	IEEE electron device letters 2023-02, Vol.44 (2), p.257-260
Hauptverfasser:	Das, Dipjyoti, Ravindran, Prasanna Venkatesan, Park, Chinsung, Tasneem, Nujhat, Wang, Zheng, Chen, Hang, Chern, Winston, Yu, Shimeng, Datta, Suman, Khan, Asif
Format:	Artikel
Sprache:	eng
Schlagworte:	Delays Dielectric constant Electric potential endurance FeFETs FEOL Ferroelectric materials Ferroelectricity Field effect transistors Ge-channel Germanium Germanium oxides memory window Permittivity Pulse measurements read-after-write Reduction retention Semiconductor devices Silicon dioxide Voltage Voltage measurement write voltage
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