TID Effect and Damage Model of ^} Co \gamma for the TiO } Nano-Rod-Based Resistive Switching Memory

The degradation trend and the degradation mechanism of the total ionizing dose effects on the TiO _{\text{2}} nano-rod arrays (NRAs)-based resistive random access memory (ReRAM) is studied by exploiting the memory to the ^{\text{60}} Co \gamma -rays. The results show that the typical bipolar \t...

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Veröffentlicht in:	IEEE transactions on electron devices 2022, p.1-6
Hauptverfasser:	Song, Hongjia, Luo, Yanhang, Zhong, Xiangli, Wang, Jinbin, Guo, Hongxia, Cong, Peitian
Format:	Artikel
Sprache:	eng
Schlagworte:	Damage model Degradation Electrodes irradiation mechanism Radiation effects Resistance resistive switching Silicon Switches TiO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula> nano-rod arrays (NRAs) total ionizing dose Voltage
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