TID Effect and Damage Model of ^} Co \gamma for the TiO } Nano-Rod-Based Resistive Switching Memory
The degradation trend and the degradation mechanism of the total ionizing dose effects on the TiO _{\text{2}} nano-rod arrays (NRAs)-based resistive random access memory (ReRAM) is studied by exploiting the memory to the ^{\text{60}} Co \gamma -rays. The results show that the typical bipolar \t...
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| Veröffentlicht in: | IEEE transactions on electron devices 2022, p.1-6 |
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| creator | Song, Hongjia Luo, Yanhang Zhong, Xiangli Wang, Jinbin Guo, Hongxia Cong, Peitian |
| description | The degradation trend and the degradation mechanism of the total ionizing dose effects on the TiO _{\text{2}} nano-rod arrays (NRAs)-based resistive random access memory (ReRAM) is studied by exploiting the memory to the ^{\text{60}} Co \gamma -rays. The results show that the typical bipolar \textit{I} - \textit{V} behaviors of the prepared Pt/TiO _{\text{2}} NRAs/Ti ReRAM can be shown clearly after 1 Mrad (Si) irradiation. In detail, the resistance of the high resistance state (HRS) decreases with the total dose, while the low resistance state (LRS) is almost unchanged. When the radiation dose reaches 1 Mrad (Si), the value of HRS resistance is reduced by about 1 order of magnitude. Moreover, the RESET voltage shows a slight decrease with the total dose. X-ray photoelectron spectrometer (XPS) characterization of resistive switching materials shows that the radiation-induced non-lattice oxygen and oxygen vacancy are the main reason for the degradation of the HRS and RESET voltage. Based on the results, a mathematical model of the \textit{I} - \textit{V} curves which can suggest the changes of the resistance and voltage simultaneously for the ReRAM under irradiation is developed based on the VTEAM model. The simulation results under different total dose of irradiation are in good agreement with the experimental results. The results can provide a basis and guidance for the research on irradiation effect and the radiation hardening for the oxide-based ReRAM. |
| doi_str_mv | 10.1109/TED.2022.3206723 |
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The results show that the typical bipolar <inline-formula> <tex-math notation="LaTeX">\textit{I}</tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\textit{V}</tex-math> </inline-formula> behaviors of the prepared Pt/TiO<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math> </inline-formula> NRAs/Ti ReRAM can be shown clearly after 1 Mrad (Si) irradiation. In detail, the resistance of the high resistance state (HRS) decreases with the total dose, while the low resistance state (LRS) is almost unchanged. When the radiation dose reaches 1 Mrad (Si), the value of HRS resistance is reduced by about 1 order of magnitude. Moreover, the RESET voltage shows a slight decrease with the total dose. X-ray photoelectron spectrometer (XPS) characterization of resistive switching materials shows that the radiation-induced non-lattice oxygen and oxygen vacancy are the main reason for the degradation of the HRS and RESET voltage. Based on the results, a mathematical model of the <inline-formula> <tex-math notation="LaTeX">\textit{I}</tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\textit{V}</tex-math> </inline-formula> curves which can suggest the changes of the resistance and voltage simultaneously for the ReRAM under irradiation is developed based on the VTEAM model. The simulation results under different total dose of irradiation are in good agreement with the experimental results. The results can provide a basis and guidance for the research on irradiation effect and the radiation hardening for the oxide-based ReRAM.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>DOI: 10.1109/TED.2022.3206723</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Damage model ; Degradation ; Electrodes ; irradiation mechanism ; Radiation effects ; Resistance ; resistive switching ; Silicon ; Switches ; TiO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula> nano-rod arrays (NRAs) ; total ionizing dose ; Voltage</subject><ispartof>IEEE transactions on electron devices, 2022, p.1-6</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-0288-2425</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9934847$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,4025,27928,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9934847$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Song, Hongjia</creatorcontrib><creatorcontrib>Luo, Yanhang</creatorcontrib><creatorcontrib>Zhong, Xiangli</creatorcontrib><creatorcontrib>Wang, Jinbin</creatorcontrib><creatorcontrib>Guo, Hongxia</creatorcontrib><creatorcontrib>Cong, Peitian</creatorcontrib><title>TID Effect and Damage Model of ^} Co \gamma for the TiO } Nano-Rod-Based Resistive Switching Memory</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[The degradation trend and the degradation mechanism of the total ionizing dose effects on the TiO<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math> </inline-formula> nano-rod arrays (NRAs)-based resistive random access memory (ReRAM) is studied by exploiting the memory to the <inline-formula> <tex-math notation="LaTeX">^{\text{60}}</tex-math> </inline-formula>Co <inline-formula> <tex-math notation="LaTeX">\gamma </tex-math> </inline-formula>-rays. The results show that the typical bipolar <inline-formula> <tex-math notation="LaTeX">\textit{I}</tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\textit{V}</tex-math> </inline-formula> behaviors of the prepared Pt/TiO<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math> </inline-formula> NRAs/Ti ReRAM can be shown clearly after 1 Mrad (Si) irradiation. In detail, the resistance of the high resistance state (HRS) decreases with the total dose, while the low resistance state (LRS) is almost unchanged. When the radiation dose reaches 1 Mrad (Si), the value of HRS resistance is reduced by about 1 order of magnitude. Moreover, the RESET voltage shows a slight decrease with the total dose. X-ray photoelectron spectrometer (XPS) characterization of resistive switching materials shows that the radiation-induced non-lattice oxygen and oxygen vacancy are the main reason for the degradation of the HRS and RESET voltage. Based on the results, a mathematical model of the <inline-formula> <tex-math notation="LaTeX">\textit{I}</tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\textit{V}</tex-math> </inline-formula> curves which can suggest the changes of the resistance and voltage simultaneously for the ReRAM under irradiation is developed based on the VTEAM model. The simulation results under different total dose of irradiation are in good agreement with the experimental results. The results can provide a basis and guidance for the research on irradiation effect and the radiation hardening for the oxide-based ReRAM.]]></description><subject>Damage model</subject><subject>Degradation</subject><subject>Electrodes</subject><subject>irradiation mechanism</subject><subject>Radiation effects</subject><subject>Resistance</subject><subject>resistive switching</subject><subject>Silicon</subject><subject>Switches</subject><subject>TiO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula> nano-rod arrays (NRAs)</subject><subject>total ionizing dose</subject><subject>Voltage</subject><issn>0018-9383</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9yb0KwjAUQOEMCv7ugst9gdY0Kdqu2ooOKmhHUS7tTY2YRpqiOPjuOjg7HT4OY6OA-0HA40mWJr7gQvhS8OlMyBbrch5EXiwj2WE9565fTsNQdFmerRNIlaK8AawKSNBgSbCxBd3AKji9YWHhWKIxCMrW0FwIMr2DN2yxst7eFt4cHRWwJ6ddox8Eh6du8ouuStiQsfVrwNoKb46Gv_bZeJlmi5Wnieh8r7XB-nWOYxlG4Uz-vx-1UkIK</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Song, Hongjia</creator><creator>Luo, Yanhang</creator><creator>Zhong, Xiangli</creator><creator>Wang, Jinbin</creator><creator>Guo, Hongxia</creator><creator>Cong, Peitian</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><orcidid>https://orcid.org/0000-0003-0288-2425</orcidid></search><sort><creationdate>2022</creationdate><title>TID Effect and Damage Model of ^} Co \gamma for the TiO } Nano-Rod-Based Resistive Switching Memory</title><author>Song, Hongjia ; Luo, Yanhang ; Zhong, Xiangli ; Wang, Jinbin ; Guo, Hongxia ; Cong, Peitian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_99348473</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Damage model</topic><topic>Degradation</topic><topic>Electrodes</topic><topic>irradiation mechanism</topic><topic>Radiation effects</topic><topic>Resistance</topic><topic>resistive switching</topic><topic>Silicon</topic><topic>Switches</topic><topic>TiO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula> nano-rod arrays (NRAs)</topic><topic>total ionizing dose</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Song, Hongjia</creatorcontrib><creatorcontrib>Luo, Yanhang</creatorcontrib><creatorcontrib>Zhong, Xiangli</creatorcontrib><creatorcontrib>Wang, Jinbin</creatorcontrib><creatorcontrib>Guo, Hongxia</creatorcontrib><creatorcontrib>Cong, Peitian</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Song, Hongjia</au><au>Luo, Yanhang</au><au>Zhong, Xiangli</au><au>Wang, Jinbin</au><au>Guo, Hongxia</au><au>Cong, Peitian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>TID Effect and Damage Model of ^} Co \gamma for the TiO } Nano-Rod-Based Resistive Switching Memory</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022</date><risdate>2022</risdate><spage>1</spage><epage>6</epage><pages>1-6</pages><issn>0018-9383</issn><coden>IETDAI</coden><abstract><![CDATA[The degradation trend and the degradation mechanism of the total ionizing dose effects on the TiO<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math> </inline-formula> nano-rod arrays (NRAs)-based resistive random access memory (ReRAM) is studied by exploiting the memory to the <inline-formula> <tex-math notation="LaTeX">^{\text{60}}</tex-math> </inline-formula>Co <inline-formula> <tex-math notation="LaTeX">\gamma </tex-math> </inline-formula>-rays. The results show that the typical bipolar <inline-formula> <tex-math notation="LaTeX">\textit{I}</tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\textit{V}</tex-math> </inline-formula> behaviors of the prepared Pt/TiO<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math> </inline-formula> NRAs/Ti ReRAM can be shown clearly after 1 Mrad (Si) irradiation. In detail, the resistance of the high resistance state (HRS) decreases with the total dose, while the low resistance state (LRS) is almost unchanged. When the radiation dose reaches 1 Mrad (Si), the value of HRS resistance is reduced by about 1 order of magnitude. Moreover, the RESET voltage shows a slight decrease with the total dose. X-ray photoelectron spectrometer (XPS) characterization of resistive switching materials shows that the radiation-induced non-lattice oxygen and oxygen vacancy are the main reason for the degradation of the HRS and RESET voltage. Based on the results, a mathematical model of the <inline-formula> <tex-math notation="LaTeX">\textit{I}</tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\textit{V}</tex-math> </inline-formula> curves which can suggest the changes of the resistance and voltage simultaneously for the ReRAM under irradiation is developed based on the VTEAM model. The simulation results under different total dose of irradiation are in good agreement with the experimental results. The results can provide a basis and guidance for the research on irradiation effect and the radiation hardening for the oxide-based ReRAM.]]></abstract><pub>IEEE</pub><doi>10.1109/TED.2022.3206723</doi><orcidid>https://orcid.org/0000-0003-0288-2425</orcidid></addata></record> |
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| subjects | Damage model Degradation Electrodes irradiation mechanism Radiation effects Resistance resistive switching Silicon Switches TiO<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _{\text{2}}</tex-math> </inline-formula> nano-rod arrays (NRAs) total ionizing dose Voltage |
| title | TID Effect and Damage Model of ^} Co \gamma for the TiO } Nano-Rod-Based Resistive Switching Memory |
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