First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO } Gate Dielectric

In this work, the nonvolatile memory constructed on the tunnel thin-film transistors (tunnel-TFTs) using polycrystalline-silicon channel featuring ferroelectric HfZrO _{\textit{x}} layer is demonstrated for the first time. When the pulse voltages of program (PG) and erase (ER) are, respectively, 3....

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