High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications

High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications

High power 1310 nm InGaAsP/InP Fabry-Perot and single-frequency distributed-feedback (DFB) lasers with record output powers are reported. DFB chip power levels of 450 mW and ex-fiber power of 315 mW have been achieved for CW operation at 20/spl deg/C.

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Bibliographische Detailangaben
Hauptverfasser: Menna, R., Komissarov, A., Maiorov, M., Khalfin, V., Tsekoun, A., Todorov, S., Connolly, J., Garbuzov, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical lasers
Etching
Fabry-Perot
Gratings
Indium phosphide
Laser modes
Power lasers
Pump lasers
Quantum well lasers
Waveguide lasers
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Beschreibung
Zusammenfassung:High power 1310 nm InGaAsP/InP Fabry-Perot and single-frequency distributed-feedback (DFB) lasers with record output powers are reported. DFB chip power levels of 450 mW and ex-fiber power of 315 mW have been achieved for CW operation at 20/spl deg/C.
DOI:10.1109/ECOC.2001.988850