Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V

We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate...

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Veröffentlicht in:	IEEE transactions on electron devices 2002-03, Vol.49 (3), p.422-428
Hauptverfasser:	Yagishita, A., Saito, T., Inuniiya, S., Matsuo, K., Tsunashima, Y., Suguro, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dynamics Gates MOSFETs Reduction Semiconductor devices Threshold voltage Tin Transistors
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container_end_page	428
container_issue	3
container_start_page	422
container_title	IEEE transactions on electron devices
container_volume	49
creator	Yagishita, A. Saito, T. Inuniiya, S. Matsuo, K. Tsunashima, Y. Suguro, K.
description	We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).
doi_str_mv	10.1109/16.987112
format	Article
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In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.987112</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Dynamics ; Gates ; MOSFETs ; Reduction ; Semiconductor devices ; Threshold voltage ; Tin ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.422-428</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c461t-cc370c54972339362ab517d5ce091afefa61399d8f5f23c3abf6860c8bb1547c3</citedby><cites>FETCH-LOGICAL-c461t-cc370c54972339362ab517d5ce091afefa61399d8f5f23c3abf6860c8bb1547c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/987112$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/987112$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yagishita, A.</creatorcontrib><creatorcontrib>Saito, T.</creatorcontrib><creatorcontrib>Inuniiya, S.</creatorcontrib><creatorcontrib>Matsuo, K.</creatorcontrib><creatorcontrib>Tsunashima, Y.</creatorcontrib><creatorcontrib>Suguro, K.</creatorcontrib><title>Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).</description><subject>Dynamics</subject><subject>Gates</subject><subject>MOSFETs</subject><subject>Reduction</subject><subject>Semiconductor devices</subject><subject>Threshold voltage</subject><subject>Tin</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0j1vFDEQBmALgcQRKGipLAqUFHvx-NslykESKVGKBNqVzzt7t9Hu-rD3gk758zG6KAUFXDUazaNXmtEQ8hHYHIC5U9BzZw0Af0VmoJSpnJb6NZkxBrZywoq35F3O96XVUvIZeVzsRj90gU7rhHkd-4Y-xH7yK6SNH3wOOCIdcPI9XfkJ6fXN7fdvd_R4cVctrs-r0p7QCcN6jH1c7WgbE33AtKN9_P0SFDeY_NTFkcaWbscGE2VzQ3--J29a32f88FyPyI-SfXZRXd2cX559vaqC1DBVIQjDgpLOcCGc0NwvFZhGBWQOfIut1yCca2yrWi6C8MtWW82CXS5BSRPEEfmyz92k-GuLeaqHrizW937EuM01t45L5swB0GhlrD0AcqOY5f-HBqSEQxINCFm2KfD4nxCYAO4sgCj081_0Pm7TWE5dWysVN86qgk72KKSYc8K23qRu8GlXkuo_L1WDrvcvVeynve0Q8cU9D58Aty3CuA</recordid><startdate>20020301</startdate><enddate>20020301</enddate><creator>Yagishita, A.</creator><creator>Saito, T.</creator><creator>Inuniiya, S.</creator><creator>Matsuo, K.</creator><creator>Tsunashima, Y.</creator><creator>Suguro, K.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>H8D</scope><scope>7U5</scope><scope>8BQ</scope></search><sort><creationdate>20020301</creationdate><title>Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V</title><author>Yagishita, A. ; Saito, T. ; Inuniiya, S. ; Matsuo, K. ; Tsunashima, Y. ; Suguro, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c461t-cc370c54972339362ab517d5ce091afefa61399d8f5f23c3abf6860c8bb1547c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Dynamics</topic><topic>Gates</topic><topic>MOSFETs</topic><topic>Reduction</topic><topic>Semiconductor devices</topic><topic>Threshold voltage</topic><topic>Tin</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yagishita, A.</creatorcontrib><creatorcontrib>Saito, T.</creatorcontrib><creatorcontrib>Inuniiya, S.</creatorcontrib><creatorcontrib>Matsuo, K.</creatorcontrib><creatorcontrib>Tsunashima, Y.</creatorcontrib><creatorcontrib>Suguro, K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Aerospace Database</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yagishita, A.</au><au>Saito, T.</au><au>Inuniiya, S.</au><au>Matsuo, K.</au><au>Tsunashima, Y.</au><au>Suguro, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2002-03-01</date><risdate>2002</risdate><volume>49</volume><issue>3</issue><spage>422</spage><epage>428</epage><pages>422-428</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/16.987112</doi><tpages>7</tpages></addata></record>
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subjects	Dynamics Gates MOSFETs Reduction Semiconductor devices Threshold voltage Tin Transistors
title	Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V
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