Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging
Metal halides have been demonstrated to be promising candidates for X-ray detectors. However, its large leakage current caused by the severe ion migration and intrinsic defect substantially degrades device performance. In this work, an asymmetric BA2CsPb2I7-CsPbI3 planar heterojunction X-ray detecto...
Gespeichert in:
Veröffentlicht in: | IEEE electron device letters 2022-10, Vol.43 (10), p.1709-1712 |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1712 |
---|---|
container_issue | 10 |
container_start_page | 1709 |
container_title | IEEE electron device letters |
container_volume | 43 |
creator | Xu, Youkui Li, Yingtao Peng, Guoqiang Wang, Qian Li, Zhenhua Wang, Haoxu Wang, Gang Jin, Zhiwen |
description | Metal halides have been demonstrated to be promising candidates for X-ray detectors. However, its large leakage current caused by the severe ion migration and intrinsic defect substantially degrades device performance. In this work, an asymmetric BA2CsPb2I7-CsPbI3 planar heterojunction X-ray detector is designed to suppress the leakage current. Both experimental and theoretical calculations demonstrate that: 1) enlarged ion migration energy (0.80 eV) and conductivity mutation at the interface ensure stable baseline and suppress leakage current; 2) CsPbI3 ensures effective absorption of X-ray, while BA2CsPb2I7 induces larger bulk resistance, which is expected to achieve higher photocurrent and lower dark current. Finally, the obtained X-ray detector exhibits negligible baseline drift, faster response, and smaller leakage current compared to the CsPbI3 counterparts. Specifically, the device exhibits a detection limit of 0.092 ~\mu Gy _{air} /s, and the CsPbI3-based device was 2.63 ~\mu Gy _{air} /s. |
doi_str_mv | 10.1109/LED.2022.3202173 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_9868781</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9868781</ieee_id><sourcerecordid>2718786381</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-39793e3f26193f77171a89b557c6308602296b656167e31ef947b9d43aa04ed13</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRsFbvgpcFz6k72WQ3eyyttYWI4Ad6C9tkErfNR93dCP33prR4mbk87zvMQ8gtsAkAUw_p43wSsjCc8GGC5GdkBHGcBCwW_JyMmIwg4MDEJblybsMYRJGMRmQ7dfumQW9NTp_R65oudW0KpAtTN_TT-G_61u92Fp3Dgqaot7pCOuutxdbTsrN0aaqBwdYZb36RfgWvek_n6DH3pmupbgu6anRl2uqaXJS6dnhz2mPysXh8ny2D9OVpNZumQc554gOupOLIy1CA4qWUIEEnah3HMhecJWJ4Uom1iAUIiRywVJFcqyLiWrMIC-Bjcn_s3dnup0fns03X23Y4mYUSEpkInhwodqRy2zlnscx21jTa7jNg2UFpNijNDkqzk9IhcneMGET8x1Uihk7gf8LLcDg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2718786381</pqid></control><display><type>article</type><title>Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging</title><source>IEEE Electronic Library (IEL)</source><creator>Xu, Youkui ; Li, Yingtao ; Peng, Guoqiang ; Wang, Qian ; Li, Zhenhua ; Wang, Haoxu ; Wang, Gang ; Jin, Zhiwen</creator><creatorcontrib>Xu, Youkui ; Li, Yingtao ; Peng, Guoqiang ; Wang, Qian ; Li, Zhenhua ; Wang, Haoxu ; Wang, Gang ; Jin, Zhiwen</creatorcontrib><description><![CDATA[Metal halides have been demonstrated to be promising candidates for X-ray detectors. However, its large leakage current caused by the severe ion migration and intrinsic defect substantially degrades device performance. In this work, an asymmetric BA2CsPb2I7-CsPbI3 planar heterojunction X-ray detector is designed to suppress the leakage current. Both experimental and theoretical calculations demonstrate that: 1) enlarged ion migration energy (0.80 eV) and conductivity mutation at the interface ensure stable baseline and suppress leakage current; 2) CsPbI3 ensures effective absorption of X-ray, while BA2CsPb2I7 induces larger bulk resistance, which is expected to achieve higher photocurrent and lower dark current. Finally, the obtained X-ray detector exhibits negligible baseline drift, faster response, and smaller leakage current compared to the CsPbI3 counterparts. Specifically, the device exhibits a detection limit of <inline-formula> <tex-math notation="LaTeX">0.092 ~\mu </tex-math></inline-formula>Gy<inline-formula> <tex-math notation="LaTeX">_{air} </tex-math></inline-formula>/s, and the CsPbI3-based device was <inline-formula> <tex-math notation="LaTeX">2.63 ~\mu </tex-math></inline-formula>Gy<inline-formula> <tex-math notation="LaTeX">_{air} </tex-math></inline-formula>/s.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3202173</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Asymmetric ; Asymmetry ; Dark current ; Halides ; Heterojunctions ; imaging ; Ion migration ; Ions ; Lattices ; Leakage current ; Leakage currents ; metal halide ; Metal halides ; Mutation ; Performance degradation ; Photoelectric effect ; Voltage ; X ray detectors ; X ray imagery ; X-ray detection ; X-ray imaging</subject><ispartof>IEEE electron device letters, 2022-10, Vol.43 (10), p.1709-1712</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-39793e3f26193f77171a89b557c6308602296b656167e31ef947b9d43aa04ed13</citedby><cites>FETCH-LOGICAL-c338t-39793e3f26193f77171a89b557c6308602296b656167e31ef947b9d43aa04ed13</cites><orcidid>0000-0002-6898-9930 ; 0000-0002-2288-3807 ; 0000-0002-5256-9106</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9868781$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9868781$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xu, Youkui</creatorcontrib><creatorcontrib>Li, Yingtao</creatorcontrib><creatorcontrib>Peng, Guoqiang</creatorcontrib><creatorcontrib>Wang, Qian</creatorcontrib><creatorcontrib>Li, Zhenhua</creatorcontrib><creatorcontrib>Wang, Haoxu</creatorcontrib><creatorcontrib>Wang, Gang</creatorcontrib><creatorcontrib>Jin, Zhiwen</creatorcontrib><title>Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[Metal halides have been demonstrated to be promising candidates for X-ray detectors. However, its large leakage current caused by the severe ion migration and intrinsic defect substantially degrades device performance. In this work, an asymmetric BA2CsPb2I7-CsPbI3 planar heterojunction X-ray detector is designed to suppress the leakage current. Both experimental and theoretical calculations demonstrate that: 1) enlarged ion migration energy (0.80 eV) and conductivity mutation at the interface ensure stable baseline and suppress leakage current; 2) CsPbI3 ensures effective absorption of X-ray, while BA2CsPb2I7 induces larger bulk resistance, which is expected to achieve higher photocurrent and lower dark current. Finally, the obtained X-ray detector exhibits negligible baseline drift, faster response, and smaller leakage current compared to the CsPbI3 counterparts. Specifically, the device exhibits a detection limit of <inline-formula> <tex-math notation="LaTeX">0.092 ~\mu </tex-math></inline-formula>Gy<inline-formula> <tex-math notation="LaTeX">_{air} </tex-math></inline-formula>/s, and the CsPbI3-based device was <inline-formula> <tex-math notation="LaTeX">2.63 ~\mu </tex-math></inline-formula>Gy<inline-formula> <tex-math notation="LaTeX">_{air} </tex-math></inline-formula>/s.]]></description><subject>Asymmetric</subject><subject>Asymmetry</subject><subject>Dark current</subject><subject>Halides</subject><subject>Heterojunctions</subject><subject>imaging</subject><subject>Ion migration</subject><subject>Ions</subject><subject>Lattices</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>metal halide</subject><subject>Metal halides</subject><subject>Mutation</subject><subject>Performance degradation</subject><subject>Photoelectric effect</subject><subject>Voltage</subject><subject>X ray detectors</subject><subject>X ray imagery</subject><subject>X-ray detection</subject><subject>X-ray imaging</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpcFz6k72WQ3eyyttYWI4Ad6C9tkErfNR93dCP33prR4mbk87zvMQ8gtsAkAUw_p43wSsjCc8GGC5GdkBHGcBCwW_JyMmIwg4MDEJblybsMYRJGMRmQ7dfumQW9NTp_R65oudW0KpAtTN_TT-G_61u92Fp3Dgqaot7pCOuutxdbTsrN0aaqBwdYZb36RfgWvek_n6DH3pmupbgu6anRl2uqaXJS6dnhz2mPysXh8ny2D9OVpNZumQc554gOupOLIy1CA4qWUIEEnah3HMhecJWJ4Uom1iAUIiRywVJFcqyLiWrMIC-Bjcn_s3dnup0fns03X23Y4mYUSEpkInhwodqRy2zlnscx21jTa7jNg2UFpNijNDkqzk9IhcneMGET8x1Uihk7gf8LLcDg</recordid><startdate>20221001</startdate><enddate>20221001</enddate><creator>Xu, Youkui</creator><creator>Li, Yingtao</creator><creator>Peng, Guoqiang</creator><creator>Wang, Qian</creator><creator>Li, Zhenhua</creator><creator>Wang, Haoxu</creator><creator>Wang, Gang</creator><creator>Jin, Zhiwen</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6898-9930</orcidid><orcidid>https://orcid.org/0000-0002-2288-3807</orcidid><orcidid>https://orcid.org/0000-0002-5256-9106</orcidid></search><sort><creationdate>20221001</creationdate><title>Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging</title><author>Xu, Youkui ; Li, Yingtao ; Peng, Guoqiang ; Wang, Qian ; Li, Zhenhua ; Wang, Haoxu ; Wang, Gang ; Jin, Zhiwen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-39793e3f26193f77171a89b557c6308602296b656167e31ef947b9d43aa04ed13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Asymmetric</topic><topic>Asymmetry</topic><topic>Dark current</topic><topic>Halides</topic><topic>Heterojunctions</topic><topic>imaging</topic><topic>Ion migration</topic><topic>Ions</topic><topic>Lattices</topic><topic>Leakage current</topic><topic>Leakage currents</topic><topic>metal halide</topic><topic>Metal halides</topic><topic>Mutation</topic><topic>Performance degradation</topic><topic>Photoelectric effect</topic><topic>Voltage</topic><topic>X ray detectors</topic><topic>X ray imagery</topic><topic>X-ray detection</topic><topic>X-ray imaging</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Youkui</creatorcontrib><creatorcontrib>Li, Yingtao</creatorcontrib><creatorcontrib>Peng, Guoqiang</creatorcontrib><creatorcontrib>Wang, Qian</creatorcontrib><creatorcontrib>Li, Zhenhua</creatorcontrib><creatorcontrib>Wang, Haoxu</creatorcontrib><creatorcontrib>Wang, Gang</creatorcontrib><creatorcontrib>Jin, Zhiwen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xu, Youkui</au><au>Li, Yingtao</au><au>Peng, Guoqiang</au><au>Wang, Qian</au><au>Li, Zhenhua</au><au>Wang, Haoxu</au><au>Wang, Gang</au><au>Jin, Zhiwen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2022-10-01</date><risdate>2022</risdate><volume>43</volume><issue>10</issue><spage>1709</spage><epage>1712</epage><pages>1709-1712</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[Metal halides have been demonstrated to be promising candidates for X-ray detectors. However, its large leakage current caused by the severe ion migration and intrinsic defect substantially degrades device performance. In this work, an asymmetric BA2CsPb2I7-CsPbI3 planar heterojunction X-ray detector is designed to suppress the leakage current. Both experimental and theoretical calculations demonstrate that: 1) enlarged ion migration energy (0.80 eV) and conductivity mutation at the interface ensure stable baseline and suppress leakage current; 2) CsPbI3 ensures effective absorption of X-ray, while BA2CsPb2I7 induces larger bulk resistance, which is expected to achieve higher photocurrent and lower dark current. Finally, the obtained X-ray detector exhibits negligible baseline drift, faster response, and smaller leakage current compared to the CsPbI3 counterparts. Specifically, the device exhibits a detection limit of <inline-formula> <tex-math notation="LaTeX">0.092 ~\mu </tex-math></inline-formula>Gy<inline-formula> <tex-math notation="LaTeX">_{air} </tex-math></inline-formula>/s, and the CsPbI3-based device was <inline-formula> <tex-math notation="LaTeX">2.63 ~\mu </tex-math></inline-formula>Gy<inline-formula> <tex-math notation="LaTeX">_{air} </tex-math></inline-formula>/s.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2022.3202173</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-6898-9930</orcidid><orcidid>https://orcid.org/0000-0002-2288-3807</orcidid><orcidid>https://orcid.org/0000-0002-5256-9106</orcidid></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 0741-3106 |
ispartof | IEEE electron device letters, 2022-10, Vol.43 (10), p.1709-1712 |
issn | 0741-3106 1558-0563 |
language | eng |
recordid | cdi_ieee_primary_9868781 |
source | IEEE Electronic Library (IEL) |
subjects | Asymmetric Asymmetry Dark current Halides Heterojunctions imaging Ion migration Ions Lattices Leakage current Leakage currents metal halide Metal halides Mutation Performance degradation Photoelectric effect Voltage X ray detectors X ray imagery X-ray detection X-ray imaging |
title | Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T11%3A10%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Asymmetric%20Metal%20Halide%20Film%20With%20Suppressed%20Leakage%20Current%20for%20High%20Sensitive%20X-Ray%20Detection%20and%20Imaging&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Xu,%20Youkui&rft.date=2022-10-01&rft.volume=43&rft.issue=10&rft.spage=1709&rft.epage=1712&rft.pages=1709-1712&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2022.3202173&rft_dat=%3Cproquest_RIE%3E2718786381%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2718786381&rft_id=info:pmid/&rft_ieee_id=9868781&rfr_iscdi=true |