CEVGMM: Computationally Efficient Versatile Generic Memristor Model
A memristor is a passive circuit element that has numerous applications ranging from storage to processing. The attributes of memristor, such as low power, fast switching speed, and non-volatility, make it a promising candidate for computing applications. To deploy the memristors at the circuit leve...
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Veröffentlicht in: | IEEE transactions on very large scale integration (VLSI) systems 2022-11, Vol.30 (11), p.1794-1802 |
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creator | Zafar, Mubeen Naeem Awais, Muhammad Shehzad, Muhammad Naeem Javed, Abbas |
description | A memristor is a passive circuit element that has numerous applications ranging from storage to processing. The attributes of memristor, such as low power, fast switching speed, and non-volatility, make it a promising candidate for computing applications. To deploy the memristors at the circuit level, a versatile, computationally efficient, and generic model is required to analyze the circuit performance. This article presents a computationally inexpensive, generic, and accurate phenomenological model of the memristor. The proposed model predicts an accurate current-voltage ( I - V ) relationship based on the current conduction mechanism. The presented modeling technique can be incorporated into any practical memristor behavior by optimizing the fitting parameters. The model has the capability to optimize its accuracy and computational efficiency by calibrating the model parameters. The results are compared with the characterization data of numerous memristors and noteworthy models of memristors to validate the proposed approach. The results depict that the proposed model is more flexible, computationally efficient, versatile, and generic. It improves the simulation run time up to 24.47% with the relative root mean squared error of 0.4142%. The model exhibits remarkable results when compared with titanium dioxide-based devices. The proposed model can be deployed to various applications, such as logic design, memory design, and neuromorphic computing. |
doi_str_mv | 10.1109/TVLSI.2022.3194251 |
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The attributes of memristor, such as low power, fast switching speed, and non-volatility, make it a promising candidate for computing applications. To deploy the memristors at the circuit level, a versatile, computationally efficient, and generic model is required to analyze the circuit performance. This article presents a computationally inexpensive, generic, and accurate phenomenological model of the memristor. The proposed model predicts an accurate current-voltage (<inline-formula> <tex-math notation="LaTeX">I </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">V </tex-math></inline-formula>) relationship based on the current conduction mechanism. The presented modeling technique can be incorporated into any practical memristor behavior by optimizing the fitting parameters. The model has the capability to optimize its accuracy and computational efficiency by calibrating the model parameters. The results are compared with the characterization data of numerous memristors and noteworthy models of memristors to validate the proposed approach. The results depict that the proposed model is more flexible, computationally efficient, versatile, and generic. It improves the simulation run time up to 24.47% with the relative root mean squared error of 0.4142%. The model exhibits remarkable results when compared with titanium dioxide-based devices. The proposed model can be deployed to various applications, such as logic design, memory design, and neuromorphic computing.]]></description><identifier>ISSN: 1063-8210</identifier><identifier>EISSN: 1557-9999</identifier><identifier>DOI: 10.1109/TVLSI.2022.3194251</identifier><identifier>CODEN: ITCOB4</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Adaptation models ; Circuits ; Computational efficiency ; Computational modeling ; Integrated circuit modeling ; Logic design ; Mathematical modeling ; Mathematical models ; memristor ; Memristors ; Optimization ; Parameters ; Resistance ; resistive switching ; Switches ; Titanium dioxide ; window function</subject><ispartof>IEEE transactions on very large scale integration (VLSI) systems, 2022-11, Vol.30 (11), p.1794-1802</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c176t-1c11ae2497acbac6c1723341d845c21183a0867b50a2e3bff547c12cef93bab63</cites><orcidid>0000-0002-5904-1662</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9849486$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9849486$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zafar, Mubeen</creatorcontrib><creatorcontrib>Naeem Awais, Muhammad</creatorcontrib><creatorcontrib>Shehzad, Muhammad Naeem</creatorcontrib><creatorcontrib>Javed, Abbas</creatorcontrib><title>CEVGMM: Computationally Efficient Versatile Generic Memristor Model</title><title>IEEE transactions on very large scale integration (VLSI) systems</title><addtitle>TVLSI</addtitle><description><![CDATA[A memristor is a passive circuit element that has numerous applications ranging from storage to processing. The attributes of memristor, such as low power, fast switching speed, and non-volatility, make it a promising candidate for computing applications. To deploy the memristors at the circuit level, a versatile, computationally efficient, and generic model is required to analyze the circuit performance. This article presents a computationally inexpensive, generic, and accurate phenomenological model of the memristor. The proposed model predicts an accurate current-voltage (<inline-formula> <tex-math notation="LaTeX">I </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">V </tex-math></inline-formula>) relationship based on the current conduction mechanism. The presented modeling technique can be incorporated into any practical memristor behavior by optimizing the fitting parameters. The model has the capability to optimize its accuracy and computational efficiency by calibrating the model parameters. The results are compared with the characterization data of numerous memristors and noteworthy models of memristors to validate the proposed approach. The results depict that the proposed model is more flexible, computationally efficient, versatile, and generic. It improves the simulation run time up to 24.47% with the relative root mean squared error of 0.4142%. The model exhibits remarkable results when compared with titanium dioxide-based devices. The proposed model can be deployed to various applications, such as logic design, memory design, and neuromorphic computing.]]></description><subject>Adaptation models</subject><subject>Circuits</subject><subject>Computational efficiency</subject><subject>Computational modeling</subject><subject>Integrated circuit modeling</subject><subject>Logic design</subject><subject>Mathematical modeling</subject><subject>Mathematical models</subject><subject>memristor</subject><subject>Memristors</subject><subject>Optimization</subject><subject>Parameters</subject><subject>Resistance</subject><subject>resistive switching</subject><subject>Switches</subject><subject>Titanium dioxide</subject><subject>window function</subject><issn>1063-8210</issn><issn>1557-9999</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE9LAzEQxYMoWKtfQC8Lnrdm8md3402WWgtdPFh7Ddl0Ainbbk22h357U1ucywyP94bHj5BHoBMAql6Wq8XXfMIoYxMOSjAJV2QEUpa5SnOdblrwvGJAb8ldjBtKQQhFR6Sup6tZ07xmdb_dHwYz-H5nuu6YTZ3z1uNuyFYYYtI7zGa4w-Bt1uA2-Dj0IWv6NXb35MaZLuLDZY_J9_t0WX_ki8_ZvH5b5BbKYsjBAhhkQpXGtsYWSWWcC1hXQloGUHFDq6JsJTUMeeucFKUFZtEp3pq24GPyfP67D_3PAeOgN_0hpLpRs5KVVEgqVXKxs8uGPsaATu-D35pw1ED1CZb-g6VPsPQFVgo9nUMeEf8DqhJKVAX_BVYbZQo</recordid><startdate>20221101</startdate><enddate>20221101</enddate><creator>Zafar, Mubeen</creator><creator>Naeem Awais, Muhammad</creator><creator>Shehzad, Muhammad Naeem</creator><creator>Javed, Abbas</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5904-1662</orcidid></search><sort><creationdate>20221101</creationdate><title>CEVGMM: Computationally Efficient Versatile Generic Memristor Model</title><author>Zafar, Mubeen ; Naeem Awais, Muhammad ; Shehzad, Muhammad Naeem ; Javed, Abbas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c176t-1c11ae2497acbac6c1723341d845c21183a0867b50a2e3bff547c12cef93bab63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Adaptation models</topic><topic>Circuits</topic><topic>Computational efficiency</topic><topic>Computational modeling</topic><topic>Integrated circuit modeling</topic><topic>Logic design</topic><topic>Mathematical modeling</topic><topic>Mathematical models</topic><topic>memristor</topic><topic>Memristors</topic><topic>Optimization</topic><topic>Parameters</topic><topic>Resistance</topic><topic>resistive switching</topic><topic>Switches</topic><topic>Titanium dioxide</topic><topic>window function</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zafar, Mubeen</creatorcontrib><creatorcontrib>Naeem Awais, Muhammad</creatorcontrib><creatorcontrib>Shehzad, Muhammad Naeem</creatorcontrib><creatorcontrib>Javed, Abbas</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on very large scale integration (VLSI) systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zafar, Mubeen</au><au>Naeem Awais, Muhammad</au><au>Shehzad, Muhammad Naeem</au><au>Javed, Abbas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CEVGMM: Computationally Efficient Versatile Generic Memristor Model</atitle><jtitle>IEEE transactions on very large scale integration (VLSI) systems</jtitle><stitle>TVLSI</stitle><date>2022-11-01</date><risdate>2022</risdate><volume>30</volume><issue>11</issue><spage>1794</spage><epage>1802</epage><pages>1794-1802</pages><issn>1063-8210</issn><eissn>1557-9999</eissn><coden>ITCOB4</coden><abstract><![CDATA[A memristor is a passive circuit element that has numerous applications ranging from storage to processing. The attributes of memristor, such as low power, fast switching speed, and non-volatility, make it a promising candidate for computing applications. To deploy the memristors at the circuit level, a versatile, computationally efficient, and generic model is required to analyze the circuit performance. This article presents a computationally inexpensive, generic, and accurate phenomenological model of the memristor. The proposed model predicts an accurate current-voltage (<inline-formula> <tex-math notation="LaTeX">I </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">V </tex-math></inline-formula>) relationship based on the current conduction mechanism. The presented modeling technique can be incorporated into any practical memristor behavior by optimizing the fitting parameters. The model has the capability to optimize its accuracy and computational efficiency by calibrating the model parameters. The results are compared with the characterization data of numerous memristors and noteworthy models of memristors to validate the proposed approach. The results depict that the proposed model is more flexible, computationally efficient, versatile, and generic. It improves the simulation run time up to 24.47% with the relative root mean squared error of 0.4142%. The model exhibits remarkable results when compared with titanium dioxide-based devices. The proposed model can be deployed to various applications, such as logic design, memory design, and neuromorphic computing.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TVLSI.2022.3194251</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-5904-1662</orcidid></addata></record> |
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subjects | Adaptation models Circuits Computational efficiency Computational modeling Integrated circuit modeling Logic design Mathematical modeling Mathematical models memristor Memristors Optimization Parameters Resistance resistive switching Switches Titanium dioxide window function |
title | CEVGMM: Computationally Efficient Versatile Generic Memristor Model |
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