High performance SOI DTMOS using a retrograde base with a low impurity surface channel
This paper presents a simulation-based investigation on 0.13 /spl mu/m SOI dynamic threshold MOS (DTMOS) structures with uniform and retrograde base profiles. The base of the retrograde SOI DTMOS is split into a low impurity surface channel and a heavily doped body. The low impurity channel is able...
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| creator | Feixia Yu Cheng, M.-C. Jun Xu |
| description | This paper presents a simulation-based investigation on 0.13 /spl mu/m SOI dynamic threshold MOS (DTMOS) structures with uniform and retrograde base profiles. The base of the retrograde SOI DTMOS is split into a low impurity surface channel and a heavily doped body. The low impurity channel is able to provide high channel mobility, and the heavily doped body enhances the body bias effect to take full advantage of the DTMOS function. In addition, the heavily doped body is responsible for lowering body and off currents, and can also effectively suppress short-channel effects. |
| doi_str_mv | 10.1109/ISDRS.2001.984594 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_984594</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>984594</ieee_id><sourcerecordid>984594</sourcerecordid><originalsourceid>FETCH-LOGICAL-i174t-6f1ec27328c52ff597e15d60434b7c4dfbbeb1f5a06a1755abf13028c7c7355f3</originalsourceid><addsrcrecordid>eNotT19LwzAcDIigzH4AfcoXaE2apGkfZVNXmBTs9HWk6S9tpP9IWsa-vYXtODg47g4OoWdKIkpJ9pqXu-8yigmhUZZykfE7FGQyJSuZ5CzmDyjw_o-sYFkSp8kj-t3bpsUTODO6Xg0acFnkeHf8Kkq8eDs0WGEHsxsbp2rAlfKAz3ZuV7sbz9j20-LsfMF-cUatbd2qYYDuCd0b1XkIbrpBPx_vx-0-PBSf-fbtEFoq-RwmhoKOJYtTLWJjRCaBijohnPFKal6bqoKKGqFIoqgUQlWGMrKmpZZMCMM26OW6awHgNDnbK3c5Xc-zf213T6s</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>High performance SOI DTMOS using a retrograde base with a low impurity surface channel</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Feixia Yu ; Cheng, M.-C. ; Jun Xu</creator><creatorcontrib>Feixia Yu ; Cheng, M.-C. ; Jun Xu</creatorcontrib><description>This paper presents a simulation-based investigation on 0.13 /spl mu/m SOI dynamic threshold MOS (DTMOS) structures with uniform and retrograde base profiles. The base of the retrograde SOI DTMOS is split into a low impurity surface channel and a heavily doped body. The low impurity channel is able to provide high channel mobility, and the heavily doped body enhances the body bias effect to take full advantage of the DTMOS function. In addition, the heavily doped body is responsible for lowering body and off currents, and can also effectively suppress short-channel effects.</description><identifier>ISBN: 9780780374324</identifier><identifier>ISBN: 0780374320</identifier><identifier>DOI: 10.1109/ISDRS.2001.984594</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping profiles ; Dynamic voltage scaling ; Energy consumption ; Impurities ; Low voltage ; Microelectronics ; MOS devices ; Silicon ; Temperature ; Threshold voltage</subject><ispartof>2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2001, p.613-616</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/984594$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27904,54897</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/984594$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Feixia Yu</creatorcontrib><creatorcontrib>Cheng, M.-C.</creatorcontrib><creatorcontrib>Jun Xu</creatorcontrib><title>High performance SOI DTMOS using a retrograde base with a low impurity surface channel</title><title>2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)</title><addtitle>ISDRS</addtitle><description>This paper presents a simulation-based investigation on 0.13 /spl mu/m SOI dynamic threshold MOS (DTMOS) structures with uniform and retrograde base profiles. The base of the retrograde SOI DTMOS is split into a low impurity surface channel and a heavily doped body. The low impurity channel is able to provide high channel mobility, and the heavily doped body enhances the body bias effect to take full advantage of the DTMOS function. In addition, the heavily doped body is responsible for lowering body and off currents, and can also effectively suppress short-channel effects.</description><subject>Doping profiles</subject><subject>Dynamic voltage scaling</subject><subject>Energy consumption</subject><subject>Impurities</subject><subject>Low voltage</subject><subject>Microelectronics</subject><subject>MOS devices</subject><subject>Silicon</subject><subject>Temperature</subject><subject>Threshold voltage</subject><isbn>9780780374324</isbn><isbn>0780374320</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotT19LwzAcDIigzH4AfcoXaE2apGkfZVNXmBTs9HWk6S9tpP9IWsa-vYXtODg47g4OoWdKIkpJ9pqXu-8yigmhUZZykfE7FGQyJSuZ5CzmDyjw_o-sYFkSp8kj-t3bpsUTODO6Xg0acFnkeHf8Kkq8eDs0WGEHsxsbp2rAlfKAz3ZuV7sbz9j20-LsfMF-cUatbd2qYYDuCd0b1XkIbrpBPx_vx-0-PBSf-fbtEFoq-RwmhoKOJYtTLWJjRCaBijohnPFKal6bqoKKGqFIoqgUQlWGMrKmpZZMCMM26OW6awHgNDnbK3c5Xc-zf213T6s</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Feixia Yu</creator><creator>Cheng, M.-C.</creator><creator>Jun Xu</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2001</creationdate><title>High performance SOI DTMOS using a retrograde base with a low impurity surface channel</title><author>Feixia Yu ; Cheng, M.-C. ; Jun Xu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-6f1ec27328c52ff597e15d60434b7c4dfbbeb1f5a06a1755abf13028c7c7355f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Doping profiles</topic><topic>Dynamic voltage scaling</topic><topic>Energy consumption</topic><topic>Impurities</topic><topic>Low voltage</topic><topic>Microelectronics</topic><topic>MOS devices</topic><topic>Silicon</topic><topic>Temperature</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Feixia Yu</creatorcontrib><creatorcontrib>Cheng, M.-C.</creatorcontrib><creatorcontrib>Jun Xu</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Feixia Yu</au><au>Cheng, M.-C.</au><au>Jun Xu</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High performance SOI DTMOS using a retrograde base with a low impurity surface channel</atitle><btitle>2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)</btitle><stitle>ISDRS</stitle><date>2001</date><risdate>2001</risdate><spage>613</spage><epage>616</epage><pages>613-616</pages><isbn>9780780374324</isbn><isbn>0780374320</isbn><abstract>This paper presents a simulation-based investigation on 0.13 /spl mu/m SOI dynamic threshold MOS (DTMOS) structures with uniform and retrograde base profiles. The base of the retrograde SOI DTMOS is split into a low impurity surface channel and a heavily doped body. The low impurity channel is able to provide high channel mobility, and the heavily doped body enhances the body bias effect to take full advantage of the DTMOS function. In addition, the heavily doped body is responsible for lowering body and off currents, and can also effectively suppress short-channel effects.</abstract><pub>IEEE</pub><doi>10.1109/ISDRS.2001.984594</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2001, p.613-616 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Doping profiles Dynamic voltage scaling Energy consumption Impurities Low voltage Microelectronics MOS devices Silicon Temperature Threshold voltage |
| title | High performance SOI DTMOS using a retrograde base with a low impurity surface channel |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T09%3A08%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=High%20performance%20SOI%20DTMOS%20using%20a%20retrograde%20base%20with%20a%20low%20impurity%20surface%20channel&rft.btitle=2001%20International%20Semiconductor%20Device%20Research%20Symposium.%20Symposium%20Proceedings%20(Cat.%20No.01EX497)&rft.au=Feixia%20Yu&rft.date=2001&rft.spage=613&rft.epage=616&rft.pages=613-616&rft.isbn=9780780374324&rft.isbn_list=0780374320&rft_id=info:doi/10.1109/ISDRS.2001.984594&rft_dat=%3Cieee_6IE%3E984594%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=984594&rfr_iscdi=true |