A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation

Using self-consistent two dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Nawaz, M., Permthamassin, K., Zaring, C., Willander, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Erbium-doped fiber lasers Gallium arsenide Laser excitation Laser theory Optical computing Optical materials Pump lasers Quantum well lasers Temperature Threshold current
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