A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation

A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation

Using self-consistent two dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold c...

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Hauptverfasser: Nawaz, M., Permthamassin, K., Zaring, C., Willander, M.
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Sprache:eng
Schlagworte:
Erbium-doped fiber lasers
Gallium arsenide
Laser excitation
Laser theory
Optical computing
Optical materials
Pump lasers
Quantum well lasers
Temperature
Threshold current
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Permthamassin, K.
Zaring, C.
Willander, M.
description Using self-consistent two dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAs/GaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAs/GaAs, GaInAs/GaInAsP active region suffers from larger spread in the threshold current due to nonuniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths.
doi_str_mv 10.1109/ISDRS.2001.984497
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subjects Erbium-doped fiber lasers
Gallium arsenide
Laser excitation
Laser theory
Optical computing
Optical materials
Pump lasers
Quantum well lasers
Temperature
Threshold current
title A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation
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