UHV/CVD self-organized growth of Ge quantum dots

Ge quantum dots were self-organized grown using a UHV/CVD system. The results show that the scale, morphology and distribution of the quantum dots were greatly influenced by the growth temperature. Ge quantum dots grown at 550/spl deg/C and 600/spl deg/C show two typical scales, distributed uniforml...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wentao Huang, Guangli Luo, Jin Shi, Chen Li, Peiyi Chen, Pei-Hsin Tsien
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic force microscopy Germanium silicon alloys Morphology Optical devices Quantum dots Scanning electron microscopy Semiconductor nanostructures Silicon germanium Substrates US Department of Transportation
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