UHV/CVD self-organized growth of Ge quantum dots

Ge quantum dots were self-organized grown using a UHV/CVD system. The results show that the scale, morphology and distribution of the quantum dots were greatly influenced by the growth temperature. Ge quantum dots grown at 550/spl deg/C and 600/spl deg/C show two typical scales, distributed uniformly, and the density of the quantum dots is higher than 10/sup 10//cm/sup 2/. The bottom diameter of the bigger quantum dots grown at 550/spl deg/C was about 80 nm, while the smaller 45 nm. The scales of the quantum dots grown at 700/spl deg/C were obviously bigger with a worse uniformity.