Theoretical study of electrostatic-field-induced bending of membrane in shunt-capacitance MEMS RF switches
The paper describes the simulation of the performance of MEMS RF switches by using ANSYS as a primary tool. It starts with mechanic field, then electrostatic field, and then couples the effect of the two fields. The Young's modulus is one of the major factors of the pull-down voltage, it analyz...
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