Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications
This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene) / Barium Zirconate Titanate (P(VDF-TrFE) / BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is...
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| Veröffentlicht in: | IEEE electron device letters 2022-09, Vol.43 (9), p.1463-1466 |
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| container_end_page | 1466 |
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| container_issue | 9 |
| container_start_page | 1463 |
| container_title | IEEE electron device letters |
| container_volume | 43 |
| creator | Lee, Ke-Jing Yang, Tsung-Yu Chou, Dei-Wei Wang, Yeong-Her |
| description | This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene) / Barium Zirconate Titanate (P(VDF-TrFE) / BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V. |
| doi_str_mv | 10.1109/LED.2022.3188664 |
| format | Article |
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The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3188664</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Barium zirconates ; Fatigue tests ; Ferroelectric materials ; Ferroelectricity ; hybrid insulator structure ; Insulators ; Leakage current ; Logic gates ; Memory devices ; Nonvolatile memory ; Organic thin film transistor ; Organic thin film transistors ; P(VDF-TrFE) ; Pentacene ; Rough surfaces ; Sandwich structures ; Semiconductor devices ; Surface roughness ; Thin film transistors ; Vinylidene ; Vinylidene fluoride</subject><ispartof>IEEE electron device letters, 2022-09, Vol.43 (9), p.1463-1466</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-13539aadf24da46fdf2d3c34faa4f41921b806321fa4c57047002242eb4d1603</citedby><cites>FETCH-LOGICAL-c291t-13539aadf24da46fdf2d3c34faa4f41921b806321fa4c57047002242eb4d1603</cites><orcidid>0000-0003-3796-923X ; 0000-0001-6607-5759</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9815307$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9815307$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lee, Ke-Jing</creatorcontrib><creatorcontrib>Yang, Tsung-Yu</creatorcontrib><creatorcontrib>Chou, Dei-Wei</creatorcontrib><creatorcontrib>Wang, Yeong-Her</creatorcontrib><title>Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene)<inline-formula> <tex-math notation="LaTeX">/ </tex-math></inline-formula>Barium Zirconate Titanate (P(VDF-TrFE)<inline-formula> <tex-math notation="LaTeX">/ </tex-math></inline-formula>BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V.]]></description><subject>Barium zirconates</subject><subject>Fatigue tests</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>hybrid insulator structure</subject><subject>Insulators</subject><subject>Leakage current</subject><subject>Logic gates</subject><subject>Memory devices</subject><subject>Nonvolatile memory</subject><subject>Organic thin film transistor</subject><subject>Organic thin film transistors</subject><subject>P(VDF-TrFE)</subject><subject>Pentacene</subject><subject>Rough surfaces</subject><subject>Sandwich structures</subject><subject>Semiconductor devices</subject><subject>Surface roughness</subject><subject>Thin film transistors</subject><subject>Vinylidene</subject><subject>Vinylidene fluoride</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kL1PwzAQxS0EEqWwI7FYYoEh7fkjTjL2K7RSgQ4RA4vlOraUKo2DnSL1vydVK6Y73b13T_dD6JHAiBDIxuvFfESB0hEjaSoEv0IDEsdpBLFg12gACScRIyBu0V0IOwDCecIHSC-PW1-VODfeO1Mb3flK483L1zyPCp8vXsfT7wKvmnCoVed8wNZ5vDFNp7RpTDRVwZT4wzW_rt9XtcHvZu_8EU_atq50P3JNuEc3VtXBPFzqEBX5opgto_Xn22o2WUeaZqSLCItZplRpKS8VF7ZvSqYZt0pxy0lGyTYFwSixius4AZ5A_y-nZstLIoAN0fP5bOvdz8GETu7cwTd9oqQJiDRL0vSkgrNKexeCN1a2vtorf5QE5Imk7EnKE0l5Idlbns6WyhjzL89SEjNI2B_Rtm4F</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Lee, Ke-Jing</creator><creator>Yang, Tsung-Yu</creator><creator>Chou, Dei-Wei</creator><creator>Wang, Yeong-Her</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3796-923X</orcidid><orcidid>https://orcid.org/0000-0001-6607-5759</orcidid></search><sort><creationdate>20220901</creationdate><title>Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications</title><author>Lee, Ke-Jing ; Yang, Tsung-Yu ; Chou, Dei-Wei ; Wang, Yeong-Her</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-13539aadf24da46fdf2d3c34faa4f41921b806321fa4c57047002242eb4d1603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Barium zirconates</topic><topic>Fatigue tests</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>hybrid insulator structure</topic><topic>Insulators</topic><topic>Leakage current</topic><topic>Logic gates</topic><topic>Memory devices</topic><topic>Nonvolatile memory</topic><topic>Organic thin film transistor</topic><topic>Organic thin film transistors</topic><topic>P(VDF-TrFE)</topic><topic>Pentacene</topic><topic>Rough surfaces</topic><topic>Sandwich structures</topic><topic>Semiconductor devices</topic><topic>Surface roughness</topic><topic>Thin film transistors</topic><topic>Vinylidene</topic><topic>Vinylidene fluoride</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Ke-Jing</creatorcontrib><creatorcontrib>Yang, Tsung-Yu</creatorcontrib><creatorcontrib>Chou, Dei-Wei</creatorcontrib><creatorcontrib>Wang, Yeong-Her</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Ke-Jing</au><au>Yang, Tsung-Yu</au><au>Chou, Dei-Wei</au><au>Wang, Yeong-Her</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2022-09-01</date><risdate>2022</risdate><volume>43</volume><issue>9</issue><spage>1463</spage><epage>1466</epage><pages>1463-1466</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene)<inline-formula> <tex-math notation="LaTeX">/ </tex-math></inline-formula>Barium Zirconate Titanate (P(VDF-TrFE)<inline-formula> <tex-math notation="LaTeX">/ </tex-math></inline-formula>BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2022.3188664</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-3796-923X</orcidid><orcidid>https://orcid.org/0000-0001-6607-5759</orcidid></addata></record> |
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| ispartof | IEEE electron device letters, 2022-09, Vol.43 (9), p.1463-1466 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Barium zirconates Fatigue tests Ferroelectric materials Ferroelectricity hybrid insulator structure Insulators Leakage current Logic gates Memory devices Nonvolatile memory Organic thin film transistor Organic thin film transistors P(VDF-TrFE) Pentacene Rough surfaces Sandwich structures Semiconductor devices Surface roughness Thin film transistors Vinylidene Vinylidene fluoride |
| title | Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications |
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