Novel ultra thin gate oxide growth technique by alternating current anodization

Ultra-thin gate oxides prepared by the novel anodic oxidation technique of using direct-current (DC), alternating-current (AC), and direct-current with ac oscillation (DAC) as anodization voltages are studied. After suitable high temperature anneal in N/sub 2/, these anodic oxides (ANO) show improve...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jenn-Gwo Hwu, Chuang-Yuan Lee, Chieh-Chih Ting, Wei-Len Chen
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum Cathodes Electrodes MOS capacitors Oxidation Platinum Silicon Substrates Temperature distribution Voltage
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