0.25-/spl mu/m BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

0.25-/spl mu/m BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-/spl mu/m BiCMOS process. This is the first silicon-integrated radio front-end that can be used to meet GSM normal and micro base-station sp...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2002-01, Vol.50 (1), p.369-376
Hauptverfasser: Gould, P., Jenshan Lin, Boric-Lubecke, O., Zelley, C., Yung-Jinn Chen, Ran-Hong Yan
Format: Artikel
Sprache:eng
Schlagworte:
Base stations
BiCMOS integrated circuits
GSM
Integrated circuit technology
Noise measurement
Optical receivers
Radio frequency
Radiofrequency integrated circuits
Silicon
Telephone sets
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Zusammenfassung:This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-/spl mu/m BiCMOS process. This is the first silicon-integrated radio front-end that can be used to meet GSM normal and micro base-station specifications reported to date. Noise figure, gain, and output third-order intercept point are 2.1 dB, 25.8 dB, and 25.7 dBm for GSM900 and 3.3 dB, 21.3 dB, and 22.5 dBm for DCS1800, respectively.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.981288