Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors
Highly sensitive thermal sensors can be developed when replacing metallic alloys in high temperature thermoelectric (TE) detectors by semiconducting materials. Functionally graded materials (FGM) can be used to tune the temperature characteristics of the signal responsivity, which should be independ...
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| creator | Drasar, C. Ernst, H. Kaibe, H.T. Rauscher, L. Muller, E. Kaysser, W.A. |
| description | Highly sensitive thermal sensors can be developed when replacing metallic alloys in high temperature thermoelectric (TE) detectors by semiconducting materials. Functionally graded materials (FGM) can be used to tune the temperature characteristics of the signal responsivity, which should be independent from temperature. A technique of preparing segmented TE FGM of FeSi/sub 2/ doped with Al, FeSi/sub 2/ doped with Mn, or FeSi/sub 2/ double doped with Mn and Al is demonstrated. A correlated variation of the TE properties caused by change of the doping is found. The doping content of the material was varied mainly to control the temperature dependence of the Seebeck coefficient S. For highly responsive heat flux sensors, high S and low K are desired. Al+Mn double doping was employed to achieve proper S values. The linearization of sensor characteristics needs in the easiest approach a temperature independent S. This aim was met using a stack of segments with different temperature curves of the Seebeck coefficient. Constant integral thermopower between -50/spl deg/C and +500/spl deg/C with a comparably high value of about 270 /spl mu/V/K was numerically predicted for the stack with a dispersion below 5%. Accordingly, a segmented thermocouple has been prepared after the modeling results and has been characterized. |
| doi_str_mv | 10.1109/ICT.2001.979891 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_979891</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>979891</ieee_id><sourcerecordid>979891</sourcerecordid><originalsourceid>FETCH-ieee_primary_9798913</originalsourceid><addsrcrecordid>eNp9TstqwkAUHaiFauu60NX9gWQeSYmzFqMuuop7uUlv6pQ8ZO640K93RNfCgQPnxRHiU6tUa2XldrlLjVI6tYVdWP0i5rZYqIisMOo7n4hpTOWJKbL8TcyY_5WKujFT0Vb019MQ6BfK9Q-0o4fODYTeXTC4cYCxhXAgaA7osQnkHQfX8E2WfOygpoAyKalykk81GAk1chyLHd9jB0wDj54_xGuLHdP8we_iq1ztlpvEEdH-6F2P_ry_v8-emlduPka5</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Drasar, C. ; Ernst, H. ; Kaibe, H.T. ; Rauscher, L. ; Muller, E. ; Kaysser, W.A.</creator><creatorcontrib>Drasar, C. ; Ernst, H. ; Kaibe, H.T. ; Rauscher, L. ; Muller, E. ; Kaysser, W.A.</creatorcontrib><description>Highly sensitive thermal sensors can be developed when replacing metallic alloys in high temperature thermoelectric (TE) detectors by semiconducting materials. Functionally graded materials (FGM) can be used to tune the temperature characteristics of the signal responsivity, which should be independent from temperature. A technique of preparing segmented TE FGM of FeSi/sub 2/ doped with Al, FeSi/sub 2/ doped with Mn, or FeSi/sub 2/ double doped with Mn and Al is demonstrated. A correlated variation of the TE properties caused by change of the doping is found. The doping content of the material was varied mainly to control the temperature dependence of the Seebeck coefficient S. For highly responsive heat flux sensors, high S and low K are desired. Al+Mn double doping was employed to achieve proper S values. The linearization of sensor characteristics needs in the easiest approach a temperature independent S. This aim was met using a stack of segments with different temperature curves of the Seebeck coefficient. Constant integral thermopower between -50/spl deg/C and +500/spl deg/C with a comparably high value of about 270 /spl mu/V/K was numerically predicted for the stack with a dispersion below 5%. Accordingly, a segmented thermocouple has been prepared after the modeling results and has been characterized.</description><identifier>ISSN: 1094-2734</identifier><identifier>ISBN: 9780780372054</identifier><identifier>ISBN: 0780372050</identifier><identifier>DOI: 10.1109/ICT.2001.979891</identifier><language>eng</language><publisher>IEEE</publisher><subject>Detectors ; Doping ; Inorganic materials ; Semiconductivity ; Semiconductor materials ; Sensor phenomena and characterization ; Tellurium ; Temperature sensors ; Thermal sensors ; Thermoelectricity</subject><ispartof>Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589), 2001, p.298-302</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/979891$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/979891$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Drasar, C.</creatorcontrib><creatorcontrib>Ernst, H.</creatorcontrib><creatorcontrib>Kaibe, H.T.</creatorcontrib><creatorcontrib>Rauscher, L.</creatorcontrib><creatorcontrib>Muller, E.</creatorcontrib><creatorcontrib>Kaysser, W.A.</creatorcontrib><title>Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors</title><title>Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)</title><addtitle>ICT</addtitle><description>Highly sensitive thermal sensors can be developed when replacing metallic alloys in high temperature thermoelectric (TE) detectors by semiconducting materials. Functionally graded materials (FGM) can be used to tune the temperature characteristics of the signal responsivity, which should be independent from temperature. A technique of preparing segmented TE FGM of FeSi/sub 2/ doped with Al, FeSi/sub 2/ doped with Mn, or FeSi/sub 2/ double doped with Mn and Al is demonstrated. A correlated variation of the TE properties caused by change of the doping is found. The doping content of the material was varied mainly to control the temperature dependence of the Seebeck coefficient S. For highly responsive heat flux sensors, high S and low K are desired. Al+Mn double doping was employed to achieve proper S values. The linearization of sensor characteristics needs in the easiest approach a temperature independent S. This aim was met using a stack of segments with different temperature curves of the Seebeck coefficient. Constant integral thermopower between -50/spl deg/C and +500/spl deg/C with a comparably high value of about 270 /spl mu/V/K was numerically predicted for the stack with a dispersion below 5%. Accordingly, a segmented thermocouple has been prepared after the modeling results and has been characterized.</description><subject>Detectors</subject><subject>Doping</subject><subject>Inorganic materials</subject><subject>Semiconductivity</subject><subject>Semiconductor materials</subject><subject>Sensor phenomena and characterization</subject><subject>Tellurium</subject><subject>Temperature sensors</subject><subject>Thermal sensors</subject><subject>Thermoelectricity</subject><issn>1094-2734</issn><isbn>9780780372054</isbn><isbn>0780372050</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9TstqwkAUHaiFauu60NX9gWQeSYmzFqMuuop7uUlv6pQ8ZO640K93RNfCgQPnxRHiU6tUa2XldrlLjVI6tYVdWP0i5rZYqIisMOo7n4hpTOWJKbL8TcyY_5WKujFT0Vb019MQ6BfK9Q-0o4fODYTeXTC4cYCxhXAgaA7osQnkHQfX8E2WfOygpoAyKalykk81GAk1chyLHd9jB0wDj54_xGuLHdP8we_iq1ztlpvEEdH-6F2P_ry_v8-emlduPka5</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Drasar, C.</creator><creator>Ernst, H.</creator><creator>Kaibe, H.T.</creator><creator>Rauscher, L.</creator><creator>Muller, E.</creator><creator>Kaysser, W.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2001</creationdate><title>Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors</title><author>Drasar, C. ; Ernst, H. ; Kaibe, H.T. ; Rauscher, L. ; Muller, E. ; Kaysser, W.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_9798913</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Detectors</topic><topic>Doping</topic><topic>Inorganic materials</topic><topic>Semiconductivity</topic><topic>Semiconductor materials</topic><topic>Sensor phenomena and characterization</topic><topic>Tellurium</topic><topic>Temperature sensors</topic><topic>Thermal sensors</topic><topic>Thermoelectricity</topic><toplevel>online_resources</toplevel><creatorcontrib>Drasar, C.</creatorcontrib><creatorcontrib>Ernst, H.</creatorcontrib><creatorcontrib>Kaibe, H.T.</creatorcontrib><creatorcontrib>Rauscher, L.</creatorcontrib><creatorcontrib>Muller, E.</creatorcontrib><creatorcontrib>Kaysser, W.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Drasar, C.</au><au>Ernst, H.</au><au>Kaibe, H.T.</au><au>Rauscher, L.</au><au>Muller, E.</au><au>Kaysser, W.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors</atitle><btitle>Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589)</btitle><stitle>ICT</stitle><date>2001</date><risdate>2001</risdate><spage>298</spage><epage>302</epage><pages>298-302</pages><issn>1094-2734</issn><isbn>9780780372054</isbn><isbn>0780372050</isbn><abstract>Highly sensitive thermal sensors can be developed when replacing metallic alloys in high temperature thermoelectric (TE) detectors by semiconducting materials. Functionally graded materials (FGM) can be used to tune the temperature characteristics of the signal responsivity, which should be independent from temperature. A technique of preparing segmented TE FGM of FeSi/sub 2/ doped with Al, FeSi/sub 2/ doped with Mn, or FeSi/sub 2/ double doped with Mn and Al is demonstrated. A correlated variation of the TE properties caused by change of the doping is found. The doping content of the material was varied mainly to control the temperature dependence of the Seebeck coefficient S. For highly responsive heat flux sensors, high S and low K are desired. Al+Mn double doping was employed to achieve proper S values. The linearization of sensor characteristics needs in the easiest approach a temperature independent S. This aim was met using a stack of segments with different temperature curves of the Seebeck coefficient. Constant integral thermopower between -50/spl deg/C and +500/spl deg/C with a comparably high value of about 270 /spl mu/V/K was numerically predicted for the stack with a dispersion below 5%. Accordingly, a segmented thermocouple has been prepared after the modeling results and has been characterized.</abstract><pub>IEEE</pub><doi>10.1109/ICT.2001.979891</doi></addata></record> |
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| ispartof | Proceedings ICT2001. 20 International Conference on Thermoelectrics (Cat. No.01TH8589), 2001, p.298-302 |
| issn | 1094-2734 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Detectors Doping Inorganic materials Semiconductivity Semiconductor materials Sensor phenomena and characterization Tellurium Temperature sensors Thermal sensors Thermoelectricity |
| title | Segmented FGM for linearization of the characteristics of /spl beta/-FeSi/sub 2/ based thermal sensors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T12%3A19%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Segmented%20FGM%20for%20linearization%20of%20the%20characteristics%20of%20/spl%20beta/-FeSi/sub%202/%20based%20thermal%20sensors&rft.btitle=Proceedings%20ICT2001.%2020%20International%20Conference%20on%20Thermoelectrics%20(Cat.%20No.01TH8589)&rft.au=Drasar,%20C.&rft.date=2001&rft.spage=298&rft.epage=302&rft.pages=298-302&rft.issn=1094-2734&rft.isbn=9780780372054&rft.isbn_list=0780372050&rft_id=info:doi/10.1109/ICT.2001.979891&rft_dat=%3Cieee_6IE%3E979891%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=979891&rfr_iscdi=true |