A Compact Model of Nanoscale Ferroelectric Capacitor
In this brief, we present a compact model of nanoscale ferroelectric (FE) capacitors. We first use the phase-field simulation to study the polarization switching of very small FE capacitor that contains only a few grains. We show that at higher applied voltage, the entire grain undergoes a single-do...
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| Veröffentlicht in: | IEEE transactions on electron devices 2022-08, Vol.69 (8), p.4761-4764 |
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| container_title | IEEE transactions on electron devices |
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| creator | Tung, Chien-Ting Pahwa, Girish Salahuddin, Sayeef Hu, Chenming |
| description | In this brief, we present a compact model of nanoscale ferroelectric (FE) capacitors. We first use the phase-field simulation to study the polarization switching of very small FE capacitor that contains only a few grains. We show that at higher applied voltage, the entire grain undergoes a single-domain-like switching, but at lower applied voltage, the domain wall growth mechanism dominates due to the difference between the domain wall energies of bulk and defect nuclei. To create a compact model that includes this voltage dependence, we use a time-dependent domain switching model for each discrete grain with empirical modifications capturing the two different switching mechanisms. In addition, a voltage-dependent dielectric model is included to represent the nonlinear capacitance of the FE capacitor. We verify this compact model by fitting the results of phase-field modeling results with excellent agreement. |
| doi_str_mv | 10.1109/TED.2022.3181573 |
| format | Article |
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We first use the phase-field simulation to study the polarization switching of very small FE capacitor that contains only a few grains. We show that at higher applied voltage, the entire grain undergoes a single-domain-like switching, but at lower applied voltage, the domain wall growth mechanism dominates due to the difference between the domain wall energies of bulk and defect nuclei. To create a compact model that includes this voltage dependence, we use a time-dependent domain switching model for each discrete grain with empirical modifications capturing the two different switching mechanisms. In addition, a voltage-dependent dielectric model is included to represent the nonlinear capacitance of the FE capacitor. We verify this compact model by fitting the results of phase-field modeling results with excellent agreement.</description><subject>Capacitors</subject><subject>Compact model</subject><subject>Domain walls</subject><subject>Electric potential</subject><subject>ferroelectric (FE)</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>hafnium zirconate (HZO)</subject><subject>Integrated circuit modeling</subject><subject>Iron</subject><subject>Mathematical models</subject><subject>Nanoscale devices</subject><subject>phase-field modeling</subject><subject>Switches</subject><subject>Switching</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wcuC560z-dgkx7K2KlS91HPIpgls2TY12R7890ZaPA0DzzsfDyH3CDNE0E_rxfOMAqUzhgqFZBdkgkLIWje8uSQTAFS1Zopdk5uct6VtOKcTwudVG3cH68bqPW78UMVQfdh9zM4Ovlr6lKIfvBtT76rWFq4fY7olV8EO2d-d65R8LRfr9rVefb68tfNV7ajGse6cRIZ0Q1GLDlQHUgTruJNedpaC5sIJDMBkB6jLfT4EpdSGWeAcXSfYlDye5h5S_D76PJptPKZ9WWloowWK8oIsFJwol2LOyQdzSP3Oph-DYP7cmOLG_LkxZzcl8nCK9N77f1xLLaUA9gtIHV1i</recordid><startdate>20220801</startdate><enddate>20220801</enddate><creator>Tung, Chien-Ting</creator><creator>Pahwa, Girish</creator><creator>Salahuddin, Sayeef</creator><creator>Hu, Chenming</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0315-2208</orcidid><orcidid>https://orcid.org/0000-0003-0836-6296</orcidid><orcidid>https://orcid.org/0000-0003-2094-858X</orcidid><orcidid>https://orcid.org/0000-0002-4508-6237</orcidid></search><sort><creationdate>20220801</creationdate><title>A Compact Model of Nanoscale Ferroelectric Capacitor</title><author>Tung, Chien-Ting ; Pahwa, Girish ; Salahuddin, Sayeef ; Hu, Chenming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-bc71312d2195b08b075fac4c7e7ba20945c51f037b019018eff888d3a0441cb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Capacitors</topic><topic>Compact model</topic><topic>Domain walls</topic><topic>Electric potential</topic><topic>ferroelectric (FE)</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>hafnium zirconate (HZO)</topic><topic>Integrated circuit modeling</topic><topic>Iron</topic><topic>Mathematical models</topic><topic>Nanoscale devices</topic><topic>phase-field modeling</topic><topic>Switches</topic><topic>Switching</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tung, Chien-Ting</creatorcontrib><creatorcontrib>Pahwa, Girish</creatorcontrib><creatorcontrib>Salahuddin, Sayeef</creatorcontrib><creatorcontrib>Hu, Chenming</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tung, Chien-Ting</au><au>Pahwa, Girish</au><au>Salahuddin, Sayeef</au><au>Hu, Chenming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Compact Model of Nanoscale Ferroelectric Capacitor</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-08-01</date><risdate>2022</risdate><volume>69</volume><issue>8</issue><spage>4761</spage><epage>4764</epage><pages>4761-4764</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this brief, we present a compact model of nanoscale ferroelectric (FE) capacitors. We first use the phase-field simulation to study the polarization switching of very small FE capacitor that contains only a few grains. We show that at higher applied voltage, the entire grain undergoes a single-domain-like switching, but at lower applied voltage, the domain wall growth mechanism dominates due to the difference between the domain wall energies of bulk and defect nuclei. To create a compact model that includes this voltage dependence, we use a time-dependent domain switching model for each discrete grain with empirical modifications capturing the two different switching mechanisms. In addition, a voltage-dependent dielectric model is included to represent the nonlinear capacitance of the FE capacitor. We verify this compact model by fitting the results of phase-field modeling results with excellent agreement.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3181573</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-0315-2208</orcidid><orcidid>https://orcid.org/0000-0003-0836-6296</orcidid><orcidid>https://orcid.org/0000-0003-2094-858X</orcidid><orcidid>https://orcid.org/0000-0002-4508-6237</orcidid></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4761-4764 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Capacitors Compact model Domain walls Electric potential ferroelectric (FE) Ferroelectric materials Ferroelectricity hafnium zirconate (HZO) Integrated circuit modeling Iron Mathematical models Nanoscale devices phase-field modeling Switches Switching Voltage |
| title | A Compact Model of Nanoscale Ferroelectric Capacitor |
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