300 mm process integration for 0.13 /spl mu/m generation with Cu/low-k interconnect technology

Successfully transferring to a 300 mm process from a leading-edge 200 mm 0.13 /spl mu/m CMOS technology using 248 nm lithography and Cu/low-k interconnect is demonstrated in the TSMC 300 mm Pilot Line. To achieve good performance with decent throughput, a 1 to 2.5 scaling factor for process power an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chang, W., Chen, C.C., Lu, J.C., Liou, S.J., Tsai, W.J., Liu, S.Y., Lee, H.J., Wang, Y.I., Lin, H.C., Yeh, C.H., Linliu, K., Chang, S.Z., Shen, S.J., Chen, L.W., Peng, S.S., Hung, S.H., Hsiao, Y.L., Hsieh, C.N., Li, C.I., Chang, M., Lee, K.H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS process CMOS technology Delamination Dry etching Fluid flow Lithography Manufacturing industries Semiconductor device manufacture Semiconductor device modeling Throughput
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!