Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

This paper describes the characteristics of binary metallic alloys of Ta and Ru for gate electrode applications. The work function of this alloy can be varied from 4.2 eV to 5.2 eV by controlling the composition thereby enabling its use in both NMOS and PMOS devices. Excellent thermal stability up t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Huicai Zhong, Shin-Nam Hong, You-Seok Suh, Lazar, H., Heuss, G., Misra, V.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance-voltage characteristics Dielectrics Electrodes MOS devices Rapid thermal annealing Silicon alloys Silicon devices Sputtering Temperature Thermal stability
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