COB stack DRAM cell technology beyond 100 nm technology node

In this paper, the key technologies for future DRAM cells are investigated based on the COB stack cell for DRAM technology generations from 0.15 /spl mu/m node to 70 nm node. The issues and directions for 6 key technology areas are suggested for each technology node. Beyond 100 nm node, it will be v...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yongjik Park, Kinam Kim
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitors Circuits Doping Energy consumption Isolation technology Leakage current Paper technology Parasitic capacitance Random access memory Transistors
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