Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

We demonstrate a passivated MESFET fabricated on (010) Si-doped \beta -Ga 2 O 3 with breakdown over 2.4 kV without field plates, high Power Figure of Merit (PFOM), and high estimated Huang's Material Figure of Merit (HMFOM), owing to low gate charge and high breakdown. MESFETs with 13 \mu \te...

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Veröffentlicht in:	IEEE electron device letters 2022-08, Vol.43 (8), p.1307-1310
Hauptverfasser:	Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Doping Electric breakdown Field effect transistors Figure of merit gallium oxide Gallium oxides Logic gates MESFET MESFETs Performance evaluation Pollution measurement power transistors Switches Transconductance ultra wide band gap semiconductors
Online-Zugang:	Volltext
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