Enhanced Remnant Polarization (30 μC/cm2) and Retention of Ferroelectric Hf0.5Zr0.5O2 by NH3 Plasma Treatment

In this letter, NH 3 plasma treatment was utilized to improve the ferroelectric property of widely used TiN/Hf x Zr y O 2 (HZO)/TiN capacitors. The developed metal-ferroelectric-metal (MFM) structure shows high remnant polarization (P r ) of 30 ~\mu \text{C} /cm 2 after 10-min NH 3 treatment at bot...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2022-07, Vol.43 (7), p.1045-1048
Hauptverfasser:	Yuan, Peng, Wang, Boping, Yang, Yang, Lv, Shuxian, Wang, Yuan, Xu, Yannan, Jiang, Pengfei, Chen, Yuting, Dang, Zhiwei, Ding, Yaxin, Gong, Tiancheng, Luo, Qing
Format:	Artikel
Sprache:	eng
Schlagworte:	Ammonia Capacitors Ferroelectric materials Ferroelectricity High resolution electron microscopy HZO-based ferroelectric imprint Iron NH Plasma measurements Plasmas Polarization retention Tin TiN electrode Voltage measurement Zirconium
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!