Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers

In this letter, we report on the realization of a two-stage 16-way solid-state power amplifier (SSPA) in the Ka -band. To this end, we describe the design of a high-power amplifier (HPA) in a 100-nm gallium nitride (GaN) process and its integration into a split-block waveguide module. The PA module...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2022-06, Vol.32 (6), p.708-711
Hauptverfasser:	Neininger, Philipp, John, L., Zink, M., Meder, D., Kuri, M., Tessmann, A., Friesicke, C., Mikulla, M., Quay, R., Zwick, Thomas
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Ka -band Broadband Broadband communication Frequency ranges Gain Gallium nitride Gallium nitrides HEMTs Microwave circuits Modules Power amplifiers power combining Power generation Power measurement solid-state power amplifier (SSPA) waveguide Waveguides
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