Performance Analysis of Forming Free Switching Dynamics of e-Beam Evaporated SnOx Based Resistive Switching Device

In this article, we have investigated the forming free bipolar resistive switching (RS) phenomena of {e} -beam evaporated amorphous tin-oxide-based RS device with copper as a bottom electrode. To describe the impact of copper electrode over electrical response of tin-oxide-based RS device, we have...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-05, Vol.69 (5), p.2686-2691
Hauptverfasser:	Singh, Chandra Prakash, Pandey, Saurabh Kumar
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">e -beam evaporation Amorphous structure conduction mechanism Copper Crystal structure Electric contacts Electrodes Ions Metals Photonic band gap Probes resistive switching (RS) device Switching tin-oxide Voltage measurement
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